Latest issues
- 2025, Volume 18 Issue 4.1 Full text
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 32
- 5247
- Pages: 75-79
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 5518
- Pages: 31-35
MBE growth of GaAs nanowires with a silicon rich particle on the top
- Year: 2025
- Volume: 18
- Issue: 4.1
- 1
- 172
- Pages: 62-66