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- 2025, Volume 18 Issue 3 Full text
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- 2025, Volume 18 Issue 1 Full text
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 29
- 4704
- Pages: 75-79
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 25
- 4966
- Pages: 31-35