Memristor effect in heterostructures based on gallium nitride nanowires on silicon

In this work, experimental and theoretical studies of diode heterostructures based on GaN nanowires synthesized on silicon have been carried out. Current-voltage measurements showed the typical backward diode behavior in the range from -3 to +3 V and the appearance of a hysteresis loop at greater biases. It was shown for the first time that the effect of bipolar resistive switching could be observed in such structures. The ability of the corresponding memristor cells to remain their state for a long time (not less than 65 hrs) under normal conditions, as well as to bear long read cycles without loss of information were demonstrated.