Growth of GaN nanowires with InN inserts by PA-MBE

Atom physics and physics of clusters and nanostructures
Authors:
Gridchin V.O. Mintairov A.M. Shugabaev T. Axenov V.Yu. Vlasov A.S. Lendyashova V.V. Kotlyar K.P. Eliseev I.A. Khrebtov A.I. Reznik R.R. Davydov V.Yu. Cirlin G.E.
Abstract:

For the first time, the growth details and photoluminescence properties of ultra-thin InN insertions embedded in GaN nanowires are presented. The InN insertions embedded in GaN nanowires exhibit photoluminescence in the range of 2.9−3.35 eV, where the most intense emission line at 3.17−3.23 eV is tentatively attributed to monolayer-thick InN insert based on comparative spectral analysis. These findings can be promising for the development of single-photon sources and Wigner quantum dots operating from cryogenic to elevated temperatures.