2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

Atom physics and physics of clusters and nanostructures
Authors:
Arteev Dmitri S. Sakharov Alexey V. Nikolaev Andrei E. Zavarin Evgenii E. Tsatsulnikov Andrey F.
Abstract:

The influence of n-type doping of the AlGaN barrier layer in AlGaN/AlN/GaN single- and triple-channel heterostructures on their electrical properties was studied. It was found that the optimal thickness of i-AlGaN spacer is 3 nm, and  the Si concentration in n-AlGaN is 7·1018 cm-3. The lowest predicted sheet resistance at room temperature for the triple-channel structure of the optimal design is ~ 90 Ω sq-1, three times lower than that of the single-channel  structure.