Capacitance characterization of GaN/InP multilayer structures

Physical materials technology
Authors:
Mikhaylov O.P. Baranov A.I. Pozdeev V.A. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
Abstract:

This study investigates defect states in GaN/InP multilayer structures fabricated using plasma-enhanced atomic layer deposition (PEALD) for potential applications in high-efficiency multijunction solar cells. Deep-level transient spectroscopy (DLTS) and admittance spectroscopy were employed to characterize defects in the heterostructures. The DLTS spectra
revealed a distinct peak in the temperature range of 230−300 K, corresponding to defect states with activation energies of 0.46−0.58 eV under various bias voltages (from 0 to +2 V and from -1 to 0 V). Admittance spectroscopy confirmed the presence of similar defects, demonstrating voltage-dependent activation energies in the range of 0.36−0.57 eV, which is likely associated with interface states at the GaN/InP interface.