Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry

Atom physics and physics of clusters and nanostructures
Authors:
Arteev D.S. Sakharov A.V. Nikolaev A.E. Zavarin E.E. Filimonov A.V. Tsatsulnikov A.F.
Abstract:

This study evaluates optical reflectance (OR) spectroscopy as a rapid, cost-effective alternative to X-ray reflectometry (XRR) for measuring the thickness of the AlGaN barrier layer in AlGaN/GaN heterostructures. OR spectroscopy demonstrated excellent agreement with XRR, with deviations not exceeding 1 nm. The results highlight OR spectroscopy as an efficient and reliable method for routine characterization of GaN-based heterostructures.