Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures

Atom physics and physics of clusters and nanostructures
Authors:
Masyutin D,A. Rudnev A.A. Moiseev E.I. Vainilovich A.G. Lutsenko E.V. Tsatsulnikov A.F. Sakharov A.V. Arteev D.S. Nikolaev A.E. Pivovarova A.A. Zavarin E.E. Il'inskaya N.D. Markov L.K. Smirnova I.P. Kryzhanovskaya N.V. Zhukov A.E.
Abstract:

In this work, we present results on high-temperature operation microdisk lasers with an active region based on InGaN/GaN quantum wells. The diameter of the microdisks was 5 μm. The photoluminescence spectra measured in the temperature range from 25 °C to 100 °C. The temperature stability lasing is demonstrated.