Mg2Si synthesis on silicon crystals with different aspect ratio

In the paper synthesis of magnesium silicide (Mg₂Si) features on silicon crystal with different aspect ratio were observed. These crystals were etched from monocrystalline borondoped silicon wafers with (100) orientation by metal-assisted chemical etching. The synthesis was occurred in ultra-high vacuum condition by a solid phase epitaxy and the modified reactive epitaxy with ultrafast Mg deposition. The substrate temperature range in both methods was  340–390 °C. As result co-axial core-shell Si/Mg₂Si heterostructures with magnesium silicide thickness 500–1200 nm were produced.