Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

doi:10.18721/JPM.171.127

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices

Authors:

Prudchenko Kseniia К. Ustinov Victor M. Kalinovskii Vitaliy S. Maleev Nicolai A. Vasil’ev Alexey P. Kontrosh Evgeniy V. Tolkachev Ivan A.

Abstract:

A new type of thermally stable GaAs/AlGaAs tunnel diode with an intermediate i-layer is proposed as a connecting element between photoactive sub-elements in monolithic multijunction photoconverters. In the temperature range of (25–80) °C, the current-voltage characteristics for two types of n⁺⁺-GaAs(δSi)/p⁺⁺-Al_0.4Ga_0.6As(C) and n⁺⁺-GaAs(δSi)/i-GaAs/ p⁺⁺-Al_0.4Ga_0.6As:(C) structures of connecting tunnel diodes were studied. The temperature dependences of the peak tunneling current density – (J_p) and differential resistance – (R_d) were obtained. In the samples of tunnel diodes of the structure with an i-layer, an order of magnitude higher J_p values and an order of magnitude lower R_d values were obtained, with higher temperature stability than in the samples of the structure without an i-layer. The results obtained are useful in the development and creation of monolithic multijunction photoconverters of high-power laser radiation.