Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Growth strategies for achieving highly-doped GaP nanowires are investigated. Eight nanowire arrays are synthesized under different growth parameters via molecular beam epitaxy with the use of silicon and beryllium as n- and p- dopants. Electrical conductivity of individual nanowires from each array is investigated via conductive atomic force microscopy. The obtained current-voltage characteristics are numerically analyzed, the impact of nanowire geometry, contact properties and doping on the conductivity is estimated.