1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
Authors:
Karachinsky Leonid Ya. Egorov Anton Yu. Novikov Innokenty I. Bimberg Dieter Blokhin Aleksey A. Bobrov Mikhail A. Maleev Nikolai Andryushkin Vladislav Bougrov Vladislav Gladyshev Andrey G. Melnichenko Ivan A. Voropaev Kirill O. Zhumaeva Irina Ustinov Victor M. Li Hiu Rochas Stanislav S. Tian Si-Cong Blokhin Sergei A. Han Saiyi Babichev Andrei V. Sapunov Georgiy
Abstract:

High-speed vertical-cavity surface-emitting lasers of 1550 nm spectral range based on ten compressively strained In(Al)GaAs QWs were fabricated by molecular-beam epitaxy and direct double wafer-fusion technique. The devices  demonstrate threshold current of 2 mA and maximum output optical power of 4.8 mW. The effect of saturable absorber was observed at a temperature above 50 °C. Small signal analysis revealed that modulation bandwidth f-3dB and the resonant frequency fR of 8 GHz and 12 GHz, respectively, can be reached for presented VCSELs design. The NRZ-mode data rate up to 20 Gbps at 20 °C across the distance of 1000 meters was demonstrated.