Influence of the growth regime on the transport properties of doped Mg2Si films

In this work, we studied transport properties of the doped Mg₂Si film on silicon substrate. The ~1 µm-thickness film was synthesized by the solid phase epitaxy method. Well-proven Ag was chosen as a dopant. At room temperature, the resistivity was 2 Ωxcm, the mobility was 327 cm²/ (Vxs), the density was 9.3×10¹⁵ cm^-3. We established that using the solid phase epitaxy with the low temperature annealing regime led to mixed electron conductivity of the doped Mg₂Si:Ag film due to the substitution of Si-site by Ag. The activation energy of the donor level is 24 meV.