Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate

Condensed matter physics
Authors:
Voitovich V.I. Makhov I.S. Andryushkin V.V. Kopytov P.E. Papylev D.S. Kryzhanovskaya N.V. Zhukov A.E.
Abstract:

The photoluminescence spectra of short-period InGaAs/InAlAs superlattices
emitting in the 1.3 µm spectral range were investigated in the wide range of pumping powers
at the temperatures of 5−300 K. The 5 K photoluminescence spectra consisted of luminescence
bands associated with radiative electron-hole recombination in superlattices as well as in the
InP substrate and buffer layers of heterostructures. Spectral positions of superlattice emission
bands are in a good agreement with calculated values obtained with transfer matrix method for
all the samples. The temperature evolution of emission spectra was investigated as well.