Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors

Physical optics
Authors:
Novikov Innokenty I. Egorov Anton Yu. Babichev Andrei V. Papylev Denis S. Komarov Sergey D. Kryzhanovskaya Natalia V. Blokhin Sergei A. Nevedomskiy Vladimir N. Gladyshev Andrey G. Karachinsky Leonid Ya.
Abstract:

The planar microcavity structure based on non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors was fully fabricated by molecular-beam epitaxy. Usage of In0.63Ga0.37As quantum dots reveals room temperature emission near 1110 nm  with emission bandwidth of about 80 meV. The determined spectral mismatch between peak position of gain region and reflectivity spectrum dip was about 115 meV at 290 K. The shift of the reflectance dip position along the whole wafer surface was less than 15 meV. The determined by defect inspection root mean square surface roughness was less than 1.3 nm for studied 8 μm thick planar microcavity structure.

Funding:

The authors from Ioffe Institute acknowledge support in part by the grant of the Russian Science Foundation No. 22-19-00221, https://rscf.ru/project/22-19-00221/ for the structure design, MBE epitaxy, transmission electron  microscopy analysis and the study of photoluminescence spectra. The authors from HSE University acknowledge support in part by the Basic Research Program at the HSE University for support in the photoluminescence spectra analysis. The authors from ITMO University acknowledge support in part by the Ministry of Science and Higher Education of the Russian Federation, project no. 2019-1442 (project reference number FSER-2020-0013) for the  analysis of surface defect and reflection spectra of a planar microcavity structure.

Key words:
molecular-beam epitaxy planar microcavity gallium arsenide InGaAs Stransky- Krastanow growth mode
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