Articles by keywords "plant"
Radiation defect formation during sequential ion bombardment of alpha-gallium oxide
- Year: 2026
- Volume: 19
- Issue: 2
- 9
- 503
- Pages: 98-106
The influence of Ar+and Cd+ ion implantation on the composition and electronic structure of monocrystalline zinc telluride
- Year: 2026
- Volume: 19
- Issue: 2
- 8
- 525
- Pages: 84-97
Features of isovalent doping of gallium arsenide with bismuth ions
- Year: 2024
- Volume: 17
- Issue: 1.1
- 22
- 4875
- Pages: 20-24
Peculiarities of structure damage accumulation under the implantation of ions of different masses into alpha-gallium oxide at low damage levels
- Year: 2023
- Volume: 16
- Issue: 4
- 39
- 5892
- Pages: 42-49
Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности
- Year: 2023
- Volume: 16
- Issue: 1.1
- 15
- 5645
- Pages: 162-166
Sample preparation for a mass-spectrometric analysis of 13С/12С isotope fractionation from environment to the plant carbon pool
- Year: 2019
- Volume: 12
- Issue: 4
- 80
- 9804
- Pages: 69-78
The energy spectrum and some properties of lead sulphide implanted with oxygen
- Year: 2015
- Issue: 1
- 410
- 10185
- Pages: 9-20
A way of calculation of molecular effect under ion irradiation based on threshold density of collision cascade
- Year: 2009
- Issue: 2
- 0
- 9618
- Pages: 29-33
A simulation of primary radiation defects in silicon carbide bombarded by carbon ions and clusters
- Year: 2010
- Issue: 2
- 0
- 9847
- Pages: 17-23
Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters
- Year: 2011
- Issue: 2
- 0
- 9637
- Pages: 67-74
New segmented cross-linked poly(esterurethansiloxane) elastomers for medical implants
- Year: 2012
- Issue: 1
- 0
- 9818
- Pages: 100-107
The influence of collision cascade density on GaN surface topography and surface shift under atomic and molecular ion bombardment
- Year: 2012
- Issue: 2
- 0
- 10300
- Pages: 55-61
Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment
- Year: 2012
- Issue: 2
- 0
- 9958
- Pages: 49-55
The features of defect formation in silicon under molecular ion bombardment
- Year: 2012
- Issue: 3
- 0
- 10296
- Pages: 64-70