Articles by keywords "plant"

Peculiarities of structure damage accumulation under the implantation of ions of different masses into alpha-gallium oxide at low damage levels

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 13
  • 737
  • Pages: 42-49

Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 8
  • 1217
  • Pages: 162-166

Sample preparation for a mass-spectrometric analysis of 13С/12С isotope fractionation from environment to the plant carbon pool

Experimental technique and devices
  • Year: 2019
  • Volume: 12
  • Issue: 4
  • 76
  • 5132
  • Pages: 69-78

The energy spectrum and some properties of lead sulphide implanted with oxygen

Condensed matter physics
  • Year: 2015
  • Issue: 1
  • 405
  • 5947
  • Pages: 9-20

A way of calculation of molecular effect under ion irradiation based on threshold density of collision cascade

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 5464
  • Pages: 29-33

A simulation of primary radiation defects in silicon carbide bombarded by  carbon ions and clusters

Condensed matter physics
  • Year: 2010
  • Issue: 2
  • 0
  • 5702
  • Pages: 17-23

Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters

Simulation of physical processes
  • Year: 2011
  • Issue: 2
  • 0
  • 5444
  • Pages: 67-74

New segmented cross-linked poly(esterurethansiloxane) elastomers for medical implants

Physical materials technology
  • Year: 2012
  • Issue: 1
  • 0
  • 5565
  • Pages: 100-107

The influence of collision cascade density on GaN surface topography and surface shift under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 5901
  • Pages: 55-61

Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 5688
  • Pages: 49-55

The features of defect formation in silicon under molecular ion bombardment

Physical electronics
  • Year: 2012
  • Issue: 3
  • 0
  • 5961
  • Pages: 64-70