Articles by keywords "plant"
Features of isovalent doping of gallium arsenide with bismuth ions
- Year: 2024
- Volume: 17
- Issue: 1.1
- 18
- 3225
- Pages: 20-24
Peculiarities of structure damage accumulation under the implantation of ions of different masses into alpha-gallium oxide at low damage levels
- Year: 2023
- Volume: 16
- Issue: 4
- 34
- 4173
- Pages: 42-49
Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности
- Year: 2023
- Volume: 16
- Issue: 1.1
- 13
- 4209
- Pages: 162-166
Sample preparation for a mass-spectrometric analysis of 13С/12С isotope fractionation from environment to the plant carbon pool
- Year: 2019
- Volume: 12
- Issue: 4
- 80
- 8251
- Pages: 69-78
The energy spectrum and some properties of lead sulphide implanted with oxygen
- Year: 2015
- Issue: 1
- 410
- 8768
- Pages: 9-20
A way of calculation of molecular effect under ion irradiation based on threshold density of collision cascade
- Year: 2009
- Issue: 2
- 0
- 8290
- Pages: 29-33
A simulation of primary radiation defects in silicon carbide bombarded by carbon ions and clusters
- Year: 2010
- Issue: 2
- 0
- 8564
- Pages: 17-23
Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters
- Year: 2011
- Issue: 2
- 0
- 8359
- Pages: 67-74
New segmented cross-linked poly(esterurethansiloxane) elastomers for medical implants
- Year: 2012
- Issue: 1
- 0
- 8463
- Pages: 100-107
The influence of collision cascade density on GaN surface topography and surface shift under atomic and molecular ion bombardment
- Year: 2012
- Issue: 2
- 0
- 8942
- Pages: 55-61
Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment
- Year: 2012
- Issue: 2
- 0
- 8643
- Pages: 49-55
The features of defect formation in silicon under molecular ion bombardment
- Year: 2012
- Issue: 3
- 0
- 8914
- Pages: 64-70