Articles by keywords "implantation"

Features of isovalent doping of gallium arsenide with bismuth ions

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 2
  • 153
  • Pages: 20-24

Peculiarities of structure damage accumulation under the implantation of ions of different masses into alpha-gallium oxide at low damage levels

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 15
  • 962
  • Pages: 42-49

Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 10
  • 1407
  • Pages: 162-166

The energy spectrum and some properties of lead sulphide implanted with oxygen

Condensed matter physics
  • Year: 2015
  • Issue: 1
  • 406
  • 6146
  • Pages: 9-20

A way of calculation of molecular effect under ion irradiation based on threshold density of collision cascade

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 5643
  • Pages: 29-33

A simulation of primary radiation defects in silicon carbide bombarded by  carbon ions and clusters

Condensed matter physics
  • Year: 2010
  • Issue: 2
  • 0
  • 5890
  • Pages: 17-23

Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters

Simulation of physical processes
  • Year: 2011
  • Issue: 2
  • 0
  • 5641
  • Pages: 67-74

The influence of collision cascade density on GaN surface topography and surface shift under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 6094
  • Pages: 55-61

Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 5886
  • Pages: 49-55

The features of defect formation in silicon under molecular ion bombardment

Physical electronics
  • Year: 2012
  • Issue: 3
  • 0
  • 6163
  • Pages: 64-70