Radiation defect formation during sequential ion bombardment of alpha-gallium oxide

This paper presents the results of a study of radiation damage accumulation in α-Ga₂O₃ under sequential bombardment with fluorine and phosphorus ions with varying energies of the keV range. A significant effect of the ion irradiation sequence on both the number and depth distribution profile of stable defects was established. The physical nature of this noncommutativity is discussed.