SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics
Peter the Great St. Petersburg Polytechnic University
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Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Author
Zhuravlev Konstantin V.
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Zhuravlev Konstantin V.
Affiliation
Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS
zhur@isp.nsc.ru
Novosibirsk, Russian Federation
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
Bulk properties of semiconductors
Osinnykh I.V.
Malin T.V.
Zhuravlev K.V.
Year: 2023
Volume: 16
Issue: 1.3
19
2692
Pages: 33-38
Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling
Structure growth, surface, and interfaces
Maidebura Y.
Malin T.V.
Zhuravlev K.V.
Year: 2023
Volume: 16
Issue: 1.3
19
2585
Pages: 62-66
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
Structure growth, surface, and interfaces
Osinnykh I.V.
Malin T.V.
Milakhin D.S.
Zhuravlev K.V.
Year: 2024
Volume: 17
Issue: 1.1
24
1684
Pages: 43-48
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