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Timur V. Malin
Affiliation
Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS
Novosibirsk, Russian Federation
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 22
- 4160
- Pages: 33-38
Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling
- Year: 2023
- Volume: 16
- Issue: 1.3
- 21
- 3940
- Pages: 62-66
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 26
- 3327
- Pages: 43-48