Thin reduced graphene oxide based films for nanoelectronics and sensors

Formation of new devices of flexible and organic electronics requires new materials. One of the perspective classes of materials is graphene derivatives. To enhance wettability of polymer substrates we used multicomponent graphene oxide suspension with further reduction of obtained films with laser irradiation. We used UV and IR lasers for local reduction of these films to form transistors and biosensors. Graphene oxide film from 0.93 mg/ml suspension with lacquer thinner was successfully deposited and reduced for BGTE transistor formation. Reduced graphene oxide film acted as an n-type semiconductor with 2−8×10−3 cm²/V·s-1 mobility.