Study of the formation mechanisms of Ge terraces on Si(100) during MBE using the RHEED method

In the work, a comparison of the widths of Ge and Si terraces on Si(100) at temperatures in the range from 200 °C to 800 °C was made using diffraction patterns in the [100] direction. The temperatures at which the growth  mechanisms for the formation of monoatomic steps of Ge on Si(100) change have been established.