Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
Authors:
Ruzhevich Maxim S. Mynbaev Karim D. Bazhenov Nikolai L. Romanov Viacheslav V. Moiseev Konstantin D.
Abstract:

Electroluminescence of narrow-gap n-InAs/InAs1–ySby/p-InAsSbP heterostructures with the indium antimonide content in the active region y = 0.07–0.12 has been studied. A radiative recombination channel associated with the InAsSb/InAsSbP heterointerface has been discovered. The dependence of the type of this heterointerface on the actual composition of the barrier layer near the interface has been established.