Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si

Influence of the initial Si surface state on the rate of ripple nucleation under bombardment with low-energy O₂⁺ ions was investigated. It was found that the creation of a defect area in the Si near-surface layer or the creation of the initial surface relief by ion bombardment with a focused Ga⁺ ion beam facilitates a significant acceleration of the ripple nucleation on the Si surface during subsequent irradiation with an O₂⁺ ion beam.