The Frenkel pairs formation in the silicon under high energy electron and proton irradiation

The analysis of defect formation in silicon is made under the irradiations used for modeling of radiating belts of the Earth. It is shown the occurrence of microareas of silicon single-crystals with high concentration of vacancies in which reactions with formation of divacancy and their complexes with impurity atoms intensively proceed; there is a basic distinction in influence of a proton irradiation.