A simulation of primary radiation defects in silicon carbide bombarded by  carbon ions and clusters

Characteristics of low-energy implantation of ions, clusters and fullerenes C[N] (N = 1, 5, 60) in silicon carbide have been presented. An analysis of the spatial distribution of the ranges of implanted atoms and features of defect production in the subsurface area of bombarded target versus the incident cluster size were carried out.