SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal - Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
en Английский
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Publication schedule
  • №1 March 2023
    Submission deadline: 20 January 2023

Articles by keywords "computer simulation"

An electrically powered ion accelerator with contact ionization for perspective electrically powered thrusters

Physical electronics
Tsybin O.Yu. Makarov S.B. Dyubo D. B. Kuleshov Yu.V. Goncharov P.S. Martynov V.V. Shunevich N.A.
  • Year: 2020
  • Volume: 13
  • Issue: 2
  • 46
  • 3599
  • Pages: 99-115

A modified nodal pressure method for calculation of the flow distribution in hydraulic circuits for the case of unconventional closing relations

Simulation of physical processes
Mikhailovsky E.A. Novitsky N.N.
  • Year: 2015
  • Issue: 2
  • 541
  • 5048
  • Pages: 30-42

A simulation of primary radiation defects in silicon carbide bombarded by  carbon ions and clusters

Condensed matter physics
Bakaev A.V. Zhurkin E.E.
  • Year: 2010
  • Issue: 2
  • 0
  • 4462
  • Pages: 17-23

The features of the silicon gamma-ray detector amplitude spectra

Experimental technique and devices
Serebryakov A.S. Moroz A.P. Berdnikov Ya.A. Miller M.B. Efremov Yu.V. Khrunov V.S.
  • Year: 2013
  • Issue: 3
  • 706
  • 5262
  • Pages: 99-105

An application of computer simulation to detector calibration in the aqueous medium

Nuclear physics
Bagaev K.A. Kozlovsky S.S.
  • Year: 2011
  • Issue: 2
  • 0
  • 4356
  • Pages: 106-110

Longitudinal quantum transport of holes in silicon nanostructures

Condensed matter physics
Bagraev N.T. Brilinskaya E.S. Gets D.S. Klyachkin L.E. Malyarenko A.M. Romanov V.V.
  • Year: 2011
  • Issue: 2
  • 0
  • 4214
  • Pages: 41-47

The influence of constructional features of Si(Li) detector on the amplitude spectrum form

Experimental technique and devices
Moroz A.P. Serebryakov A.S. Berdnikov Ya.A.
  • Year: 2012
  • Issue: 2
  • 0
  • 4330
  • Pages: 104-111

The features of defect formation in silicon under molecular ion bombardment

Physical electronics
Karaseov P.A. Karabeshkin K.V.
  • Year: 2012
  • Issue: 3
  • 0
  • 4646
  • Pages: 64-70