Articles by keywords "computer simulation" | St. Petersburg Polytechnic University Journal - Physics and Mathematics

SPbPU Journal - Physics and Mathematics

St. Petersburg Polytechnic University Journal - Physics and Mathematics Peter the Great St. Petersburg Polytechnic University

Since 2008

ISSN 2304-9782

ISSN 2618-8686

ISSN 2405-7223

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Publication schedule

№3 September 2019

Submission deadline: 20 June 2019
№4 December 2019

Submission deadline: 1 October 2019

Articles by keywords "computer simulation"

A modified nodal pressure method for calculation of the flow distribution in hydraulic circuits for the case of unconventional closing relations

Simulation of physical processes

Mikhailovsky E.A. Novitsky N.N.

Year: 2015
Issue: 2

538
1639
Pages: 30-42

A simulation of primary radiation defects in silicon carbide bombarded by carbon ions and clusters

Condensed matter physics

Bakaev A.V. Zhurkin E.E.

Year: 2010
Issue: 2

0
876
Pages: 17-23

The features of the silicon gamma-ray detector amplitude spectra

Experimental technique and devices

Serebryakov A.S. Moroz A.P. Berdnikov Ya.A. Miller M.B. Efremov Yu.V. Khrunov V.S.

Year: 2013
Issue: 3

702
1829
Pages: 99-105

An application of computer simulation to detector calibration in the aqueous medium

Nuclear physics

Bagaev K.A. Kozlovsky S.S.

Year: 2011
Issue: 2

0
888
Pages: 106-110

Longitudinal quantum transport of holes in silicon nanostructures

Condensed matter physics

Bagraev N.T. Brilinskaya E.S. Gets D.S. Klyachkin L.E. Malyarenko A.M. Romanov V.V.

Year: 2011
Issue: 2

0
824
Pages: 41-47

The influence of constructional features of Si(Li) detector on the amplitude spectrum form

Experimental technique and devices

Moroz A.P. Serebryakov A.S. Berdnikov Ya.A.

Year: 2012
Issue: 2

0
873
Pages: 104-111

The features of defect formation in silicon under molecular ion bombardment

Physical electronics

Karaseov P.A. Karabeshkin K.V.

Year: 2012
Issue: 3

0
879
Pages: 64-70