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- 2025, Volume 18 Issue 1 Full text
Andrey P. Kokhanenko
Affiliation
National Research Tomsk State University
Tomsk, Russian Federation
Effect of temperature during homoepitaxial growth of Si on Si (100) on the character of reflection high-energy electron diffraction patterns
- Year: 2023
- Volume: 16
- Issue: 3.1
- 19
- 3651
- Pages: 112-116
Modeling the characteristics of avalanche photodiodes based on Ge/Si
- Year: 2023
- Volume: 16
- Issue: 3.1
- 29
- 4066
- Pages: 232-236
Study of the formation mechanisms of Ge terraces on Si (100) during MBE using the RHEED method
- Year: 2024
- Volume: 17
- Issue: 3.2
- 8
- 1979
- Pages: 139-142