Konstantin  N. Galkin
Konstantin N. Galkin

Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 80
  • 5721
  • Pages: 9-15

Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 42
  • 5481
  • Pages: 16-21

Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p-n junction and its photoluminescence

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 20
  • 4939
  • Pages: 137-142

Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 17
  • 5315
  • Pages: 143-148

Ultrathin Cr and Fe monosilicides on Si (111) substrate: formation, optical and thermoelectrical properties

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 24
  • 4236
  • Pages: 84-89

CoSi ultrathin films on Si (111) substrate: comparison of the stage formation in ultra-high vacuum and during annealing in argon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 18
  • 2398
  • Pages: 25-30