Nikolay  G. Galkin
Nikolay G. Galkin

Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 80
  • 5929
  • Pages: 9-15

Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 42
  • 5697
  • Pages: 16-21

Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p-n junction and its photoluminescence

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 20
  • 5121
  • Pages: 137-142

Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 17
  • 5501
  • Pages: 143-148

Ultrathin Cr and Fe monosilicides on Si (111) substrate: formation, optical and thermoelectrical properties

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 24
  • 4420
  • Pages: 84-89

Mg2Si film on Si (111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 50
  • 4941
  • Pages: 106-111

CoSi ultrathin films on Si (111) substrate: comparison of the stage formation in ultra-high vacuum and during annealing in argon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 19
  • 2604
  • Pages: 25-30

Mg2Si synthesis on silicon crystals with different aspect ratio

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 22
  • 2414
  • Pages: 31-35

Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 10
  • 2411
  • Pages: 107-111

Influence of the growth regime on the transport properties of doped Mg2Si films

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 73
  • Pages: 40-43

Si-based photodetector with an Mg2Si contact layer for SWIR range

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 65
  • Pages: 53-58