Non-ideal experimental Berry phase in the topological insulator Bi2Se3 single crystal

Bulk properties of semiconductors
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Abstract:

Magnetoresistivity and Hall resistivity of a bulk Bi2Se3 single crystal are investigated. It is found that in high magnetic fields (above 7 T), the Shubnikov – de Haas effect is observed. The Berry phase determined using the standard  Lifshitz – Onsager formalism is ФB ≈ 0.8π, which indicates the presence of Dirac fermions in the system. At the same time, ФB deviates from the ideal π value. It is shown that it is important to take into account the Zeeman interaction and the non-ideality of the Dirac dispersion relation for surface states for correct description of topological effects.