Heterostructure design features for 975 nm high-power laser diodes

The heterostructure design has been optimized to achieve high radiation output power and high conversion efficiency of 970–980 nm laser diodes. The influence of active layer geometry and waveguide layer doping on the output  electrical and optical LD chip parameters has been studied. As a result of the optimization, operating LD output of 11.6 W has been achieved at a current of 12 A. The maximum conversion efficiency was 65% at a pump current of  5A.