Features of isovalent doping of gallium arsenide with bismuth ions

Bulk properties of semiconductors
Authors:
Zdoroveyshchev Daniil A. Vikhrova Olga V. Danilov Yury Dudin Yury A. Zdoroveyshchev Anton V. Parafin Alexey E. Drozdov Mikhail N.
Abstract:

The work shows the possibility of doping gallium arsenide with bismuth during ion implantation and the effect of rapid thermal and pulsed laser annealing on these structures. The results of a study of bismuth depth distribution profiles are presented in comparison with theoretical calculations. The influence of bismuth on the optical properties of gallium arsenide was investigated using transmittance and reflection spectroscopy methods. It has been shown that the introduction of bismuth leads to a decrease in the band gap of gallium arsenide.