Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns

To create high-quality nanostructures, it is important to understand the surface morphology for given growth parameters. The paper shows the effect of temperature on the ratio of intensities and periods corresponding to the growth of Si steps with different types of superstructure. The analysis was carried out in directions [100] and [110].