Light-emitting and light-detecting perovskite electrochemical cell on silicon

Here we report on a novel architecture of inorganic perovskite light-emitting and light-detecting electrochemical cell formed on silicon substrate. The cell’s active material layer consists of a composite material made: halide perovskite (CsPbBr₃) microcrystals, polymer support matrix (poly(ethylene oxide)), and added mobile ions (Li⁺). The proposed device emits light of 7000 cd/m² and electroluminescence efficiency of 1.3∙10⁵ lm/W at 523 nm. The light-detecting property of the device is characterized by sensitivity up to 0.75 A/W, specific detectivity of 8.56∙10¹¹ Jones, and linear dynamic range of 48 dB. Moreover, since the device fabricated is fabricated on a silicon substrate it exhibits 40% lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates.