Dominant recombination in a GaAs solar cell through a compressed GaAs/In0.4Ga0.6As/GaAs quantum well

The paper is devoted to the study of the reasons for the increase in the saturation current of a p–n junction when quantum objects (quantum dots, wells, and others) are introduced into it. An assumption has been made and verified that quantum objects create additional recombination centers in the matrix material of p–n junction. For this case, a model is presented that describes the behavior of the electroluminescence quantum yield. It is shown that the model is applicable to the description of the experimental temperature dependence of electroluminescence intensity when constant current passing through a p–n junction with quantum objects. The experiment was carried out for GaAs solar cells with different numbers (1, 5, 10) of Ga_0.6In_0.4As compressed well-like (hybrid) quantum objects. The fundamental parameters of the studied quantum objects are determined. In was shown that the assumption about additional recombination centers can be one of the explanations for the experimentally observed increase in the saturation current of the p-n junction with quantum objects