Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

Condensed matter physics
Authors:
Matveev Sergey A. Denisov Sergey A. Chalkov Vadim Yu. Shengurov Vladimir G. Stepikhova Margarita V.
Abstract:

Epitaxial SiGe:Er layers on sapphire substrates which have erbium photoluminescence at a wavelength of 1.54 microns have been obtained. The structural quality and the PL intensity dependencies of the layers on the growth parameters were studied.