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Diana M. Kurbanbaeva
Affiliation
National Research University of Electronic Technology
Moscow, Russian Federation
Publications
Orcid ID
0000-0002-7012-1823
Simulation and analysis of heterostructures for normally-off p-channel GaN transistor
- Year: 2023
- Volume: 16
- Issue: 3.1
- 29
- 3620
- Pages: 449-453
Field plates design optimization to increase breakdown voltage of GaN HEMT
- Year: 2024
- Volume: 17
- Issue: 3.1
- 19
- 2235
- Pages: 204-209