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Olzhas I. Kukenov
Affiliation
National Research Tomsk State University
Tomsk, Russian Federation
Effect of temperature during homoepitaxial growth of Si on Si (100) on the character of reflection high-energy electron diffraction patterns
- Year: 2023
- Volume: 16
- Issue: 3.1
- 20
- 3973
- Pages: 112-116
Study of the formation mechanisms of Ge terraces on Si (100) during MBE using the RHEED method
- Year: 2024
- Volume: 17
- Issue: 3.2
- 9
- 2316
- Pages: 139-142
Determination of the length of the 2xN superstructure during the synthesis of Ge on Si (001) at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 21
- Pages: 91-95