Karaseov Platon A.

A way of calculation of molecular effect under ion irradiation based on threshold density of collision cascade

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 6588
  • Pages: 29-33

The influence of collision cascade density on GaN surface topography and surface shift under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 7116
  • Pages: 55-61

The features of defect formation in silicon under molecular ion bombardment

Physical electronics
  • Year: 2012
  • Issue: 3
  • 0
  • 7155
  • Pages: 64-70

Effect of temperature on properties of DLC films and DLC-Ni:C sandwich growth

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 507
  • 7605
  • Pages: 115-122

Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 6888
  • Pages: 49-55

Features of the copper-64 isotope production using the MGC-20 cyclotron at St. Petersburg Polytechnical University

Nuclear physics
  • Year: 2022
  • Volume: 15
  • Issue: 2
  • 48
  • 4268
  • Pages: 56-63

Ion-beam-induced formation of gold nanostructures on polymethyl methacrylate film

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 20
  • 3017
  • Pages: 69-74

Photocatalytic properties of NiO – gold plasmonic nanocomposite

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 19
  • 1746
  • Pages: 310-315

Peculiarities of structure damage accumulation under the implantation of ions of different masses into alpha-gallium oxide at low damage levels

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 24
  • 2065
  • Pages: 42-49

Size effects in molecular dynamics simulations of a fullerene ion impact on the silicon surface

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 21
  • 1953
  • Pages: 76-85

Microelectromechanical gas sensor of resistive type for detection of hydrogen sulphide low concentrations

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 443
  • Pages: 182-185

Transformation of the structure of thin metal films upon activation of their ability to low-voltage electron emission

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 25
  • 1492
  • Pages: 80-93

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