Determination of the length of the 2×N superstructure during the synthesis of Ge on Si(001) at different temperatures

doi:10.18721/JPM.183.217

St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University

Since 2008

ISSN 2304-9782

ISSN 2618-8686

ISSN 2405-7223

Year: 2025

Volume: 18

Issue: 3.2

Pages: 321

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UDK: 539.27

DOI: 10.18721/JPM.183.217

Article type: Conference Materials

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Determination of the length of the 2xN superstructure during the synthesis of Ge on Si (001) at different temperatures

Atom physics and physics of clusters and nanostructures

Authors:

Kukenov O.I. Dirko V.V. Lozovoy K.A. Maier X.A. Kokhanenko A.P.

Abstract:

The article is devoted to the study of the length of the 2xN superstructure during epitaxial growth of Ge on Si (001) at different synthesis temperatures in the range from 200 °C to 750 °C. The analysis took place during the growth process by reflection high-energy electron diffraction in the direction of [110]. The work makes it possible to evaluate the effectiveness of elastic stress relief due to 2xN at the initial stages of growth over a wide temperature range.