Formation of a graphene-like conductive film on the surface of SiC by laser destruction of silicon

This study is devoted to the formation of conductive graphene-like layers on the surface of silicon carbide by laser removal of silicon in local zones. The work demonstrates the effect of the laser system pulse frequency on the thickness and electrical conductivity of the resulting conductive graphene-like layer on a silicon carbide plate. In addition, optimal parameters for obtaining a conductive coating and the required surface roughness suitable for designing antenna devices are determined. At a frequency of 100 kHz, conductive graphene films of the coating with a thickness of 6.5 μm were obtained, while the modified zone was 93% of the total impact area. The thickness of the conductive layer in the local zone processed at a frequency of 40 kHz reached 5 μm, and at a frequency of 120 kHz — 7 μm. The results demonstrate the potential for the development and creation of sensor elements, optoelectronics and photonics devices.