Modeling of current-voltage characteristics of resonant tunneling structures for solving the problems of studying objective functions in the problems of synthesizing resonant tunneling diode

The resonant tunneling diode (RTD), due to the possibility of targeted synthesis of the current-voltage characteristic, is one of the most attractive non-linear elements of signal converters. To realize the advantages of the RTD, a model of its current-voltage characteristic (CVC) is needed, however, the existing models do not allow for a physical and mathematical interpretation of the relationships between the CVC parameters and the RTD design, which makes it impossible to analyze the objective functions and, as a result, the choice of optimization method. Hence, the problem of studying objective functions arises, which makes the choice of the optimization method unreasonable. To solve this problem, a compact analytical model of current transfer has been developed, the distinguishing features of which are the allowance for interelectronic interaction and the absence of undetermined empirical correction factors. Estimates of the electron density in the quantum well of the RTD heterostructural channel and the self-consistent correction to resonant levels are obtained. The developed model makes it possible to obtain estimates comparable in accuracy with estimates of distributed models over the entire area of the positive differential resistance of CVC with a relative error for AlGaAs structures not exceeding 1%, which meets the requirements of the design problems of modern radio electronic devices, in particular, devices for converting the frequency of radio signals for receiving - transmitting systems for various purposes. Thus, the presented compact model is promising for integration into RTD-based device design systems.