Algorithm and installation for measuring the current lacing voltage in high-power RF and microwave bipolar and heterojunction bipolar transistors
Methods of measuring the current lacing voltage in high-power bipolar (BT) and heterojunction bipolar (HBT) RF and microwave transistors are considered. A method and installation for determining the current lacing voltage in a transistor without introducing the device into the hot spot mode by the steepness of the dependence of the variable component of the voltage at the emitter junction on the collector voltage at a given emitter current and the supply of the sum of linearly increasing and small alternating voltage to the collector is described. A critical drawback of the known methods for determining the voltage of the UKL localization in BT and HBT is that the devices enter the hot spot mode thus the purpose of the work was to develop and experimentally test an algorithm and installation for measuring the voltage of the UKL localization without introducing the device into the hot spot mode.