The technique of investigation of surface states in a sharp nonsymmetrical CdS / p-Si heterostructures

The technique for determining the energy density of surface states in a sharp nonsymmetrical heterostructures, based on the measurement of high-and low-frequency capacitance-voltage characteristics, is presented. The technique can be applied in the case, where the charge of surface states depends on the voltage of a reverse bias. The results of investigation of theCdS/p-Si heterostructure produced by hydro-chemical deposition are presented.