Articles by keywords "ion implantation"

Features of isovalent doping of gallium arsenide with bismuth ions

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 18
  • 3348
  • Pages: 20-24

Peculiarities of structure damage accumulation under the implantation of ions of different masses into alpha-gallium oxide at low damage levels

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 34
  • 4289
  • Pages: 42-49

Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 14
  • 4304
  • Pages: 162-166

The energy spectrum and some properties of lead sulphide implanted with oxygen

Condensed matter physics
  • Year: 2015
  • Issue: 1
  • 410
  • 8860
  • Pages: 9-20

A way of calculation of molecular effect under ion irradiation based on threshold density of collision cascade

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 8373
  • Pages: 29-33

The influence of collision cascade density on GaN surface topography and surface shift under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 9046
  • Pages: 55-61

Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 8724
  • Pages: 49-55

The features of defect formation in silicon under molecular ion bombardment

Physical electronics
  • Year: 2012
  • Issue: 3
  • 0
  • 9011
  • Pages: 64-70