The resistive switching effect in polymer materials and nonvolatile memory based on this effect

Resistive switch effect in polystyrene has been investigated at room temperature and at the liquid helium temperature. Applied fields did not exceed 400 kV/cm, values of current density were less than 8 mA/mm². Stable, fast (down to 10 ns),multiple (up to 106 times) reiterative switches were fulfilled for creation nonvolatile resistive memory.