Calculation of parameters of tin impurity states in bismuth telluride using the Hall effect data

Basing on experimental temperature dependence of the Hall factor in telluride bismuth crystal doped with tin and iodine, chemical potential of holes and energy of two-electron impurity states of tin have been calculated within framework of two-band model at the temperature range of 77—330 K. Coefficient of temperature drift of tin two-electron level relatively the top of the valence band and value of Hubbard energy were estimated.