2304-9782, 2618-8686, 2405-7223 18 4.1 2025 1-135

CNF RUS 9-14 0000-0001-5386-1013 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Konstantin galkinkn@iacp.dvo.ru 0000-0003-4300-0070 Kropachev Oleg chernobez@gmail.com 0009-0008-2152-140x Goroshko Olga olgagoroshko@iacp.dvo.ru Subbotin Evgenii jons712@mail.ru Goroshko Dmitrii goroshko@iacp.dvo.ru 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru Si-Fe composites with embedded α-FeSi2 nanocrystals: formation and thermoelectric properties The technology of embedding metallic iron disilicide (α-FeSi2) nanocrystals (NCs) with different numbers of NCs multilayers and different doping levels of silicon multilayers with holes (1019 cm−3 and 1013 cm−3) was tested on SOI substrates, and composites with 4 and 8 layers of embedded α-FeSi2 NCs were grown using it. The maximum power factor 0.1 to 0.25 mW/(m×K2) at T = 450 K was observed in the composite with the maximum hole concentration in the silicon interlayers, and a decrease in the hole concentration led to a decrease in the power factor to 0.01 mW/(m×K2) at T = 450 K due to a sharp decrease in the sheet resistance with a weak increase in the Seebeck coefficient. 10.18721/JPM.184.101 539.23+537.32+536.21 silicon α-FeSi2 nanocrystals crystal structure doping Si interlayers conductivity thermoelectric properties power factor https://physmath.spbstu.ru/article/2025.85.1/

CNF RUS 15-20 Pisarenko Tatiana tata_dvo@iacp.dvo.ru Yakovlev Aleksey yakovlev@iacp.dvo.ru 0000-0003-3761-3866 Mararov Vsevolod vsevolod@iacp.dvo.ru Balashev Vyacheslav balashev@dvo.ru 0000-0002-3320-9236 Ignatovich Konstantin ignat@iacp.dvo.ru Tsukanov Dmitry tsukanov@iacp.dvo.ru The origin of the lateral photovoltaic effect in the SiO2/TeO2/Bi2Te3/n-Si(111) multilayer structure The paper presents the study of the lateral photovoltaic effect in the SiO2/TeO2/Bi2Te3/n-Si(111) multilayer structure. The spectral dependences of photosensitivity identify the localization of the photogeneration process in the space charge region of the silicon substrate at the bismuth telluride layer thickness of 5 nm or more and in the Bi2Te3 layer at its thickness of less than 5 nm. It is established that lateral photosensitivity can serve as an indicator of the natural oxidation process of the protective transparent covering. We defined that the studied structure demonstrates promising results as photovoltaic cell when the Bi2Te3 layer thickness of 5 nm and illumination parameters of λ = 730−830 nm and W = 0.8 mW. 10.18721/JPM.184.102 535.215.6:538.971 lateral photovoltaic effect topological insulator silicon multilayer structure optoelectronics https://physmath.spbstu.ru/article/2025.85.2/

CNF RUS 21-25 0009-0009-8382-1667 Matveeva Tamara 0000-0003-1602-4202 Ivanova Marina Vladimir Vladimir solovyev_v55@mail.ru Electrophysical properties of the Rochelle salt / asbestos nanocomposite material Electrical conductivity, dielectric permittivity and dielectric losses of a novel nanocomposite material obtained by the infiltration of an asbestos matrix with Rochelle salt were studied in the frequency range 100 Hz – 100 kHz. A low-temperature shift of the Curie point TC of the “guest” substance’s upper ferroelectric transition due to the influence of confined geometry was observed. 10.18721/JPM.184.103 539.216+537.226.4 Rochelle salt Curie point asbestos matrix nanocomposites https://physmath.spbstu.ru/article/2025.85.3/

CNF RUS 26-30 Ryzhkova Maria lavric@iacp.dvo.ru Bondarenko Leonid bondarenko@iacp.dvo.ru Tsukanov Dmitry tsukanov@iacp.dvo.ru Experimental and ab initio study of Si(111)(2/3)√3×(2/3)√3-Mg models In the present work, using VASP and AIRSS, we have modelled possible structures of Si(111)(2/3)√3×(2/3)√3-Mg. Ab initio density functional theory (DFT) calculations using pseudopotentials were employed to investigate structural models of the Si(111)(2/3)√3×(2/3)√3-Mg surface. A number of models were analyzed in a 2×2 surface cell. The study identifies the most energetically favorable structure in the 2×2 configuration as the “7-3_random” model, which contains 1.75 monolayers (ML) of Mg and 0.75 ML of Si. The results of ab initio calculations are well confirmed by experimental methods (STM and LEED observations). 10.18721/JPM.184.104 538.9+539.1 magnesium silicide silicon surface ultrathin films density functional theory ultra-high vacuum surface structure surface structure simulation surface energy https://physmath.spbstu.ru/article/2025.85.4/

CNF RUS 31-36 0000-0003-0430-168X Pochinok Arina pochinok.as@mail.ru 0000-0002-3578-703X Molochkov Alexander 0000-0003-2101-4914 Chernodub Maxim maxim.chernodub@su.se Chepak Alexander chepak.ak@mail.ru Ising model on Fibonacci lattices: ring topology of sphere, cut ring, and torus We study the Ising model on two-dimensional surfaces discretized using the Fibonacci method with Delaunay triangulation, considering the ring, cut ring, and torus topologies. The phase diagrams reveal a universal critical temperature of TC ≈ 3.33(3)J in the thermodynamic limit, which is consistent with the results for the Fibonacci sphere [1]. Despite the exclusion of topological defects (vertices with coordination numbers 5/7) in the ring and cut ring Fibonacci configurations, deviations from the critical temperature of the ideal flat triangular lattice are observed. The TC values, similar to the spherical case, experience shifts. Notably, the torus, which possesses the minimal defect density ( 10.18721/JPM.184.105 538.913 Ising model topological defects Fibonacci lattices Monte Carlo simulation phase diagrams https://physmath.spbstu.ru/article/2025.85.5/

CNF RUS 37-43 Sapovskii Igor Sapovskii.im@dvfu.ru Rakhmatullaev Temur rakhmatullaev.tr@dvfu.ru Pinchuk Kirill pinchuk.ke@dvfu.ru Kraynova Galina kraynova.gs@dvfu.ru Tkachenko Ivan tkachenko@ich.dvo.ru Komogortsev Sergey komogor@iph.krasn.ru Role of transition metals in modifying the exchange interaction and anisotropy of amorphous Fe-Si-B alloys Comprehensive studies of the temperature-dependent properties of amorphous Fe-Co-Si-B-Mn alloys have been conducted using differential scanning calorimetry and induction vibromagnetometry. It is established that the investigated alloys exhibit a two-stage crystallization process; the presence of cobalt in the composition leads to a non-monotonic character of the thermomagnetic curves. The phase transition temperatures, including the Curie temperature, were determined. The spin-wave stiffness constant was calculated using a modified Bloch's law. The research results are important for understanding the effect of cobalt doping on the magnetic properties of iron-based amorphous alloys. 10.18721/JPM.184.106 537.622.4+539.213.1 amorphous alloys exchange interaction random magnetic anisotropy model https://physmath.spbstu.ru/article/2025.85.6/

CNF RUS 44-48 Subbotina Elizaveta st121055@student.spbu.ru Subbotina Aleksandra aleksandrasubbotina.01@mail.ru St. Petersburg State University Serov Alexey a.serov@spbu.ru

St. Petersburg, Russian Federation

St. Petersburg State University Filosofov Nikolai n.filosofov@spbu.ru

St. Petersburg, Russian Federation

Gridchin Vladislav gridchinvo@gmail.com 0000-0002-7566-2522 Sibirev Nikolai Cirlin George george.cirlin@mail.ru St. Petersburg State University Shtrom Igor i.shtrom@spbu.ru

St. Petersburg, Russian Federation

Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire We present a study of the growth and optical properties of an embedded InGaN/GaN superlattice in nanowires. Nitride nanowires with embedded superlattice were grown by molecular beam epitaxy on a silicon substrate. The optical properties of the resulting nanostructures were studied using low-temperature photoluminescence. Photoluminescence spectrum of InGaN/GaN superlattice exhibits two distinct emission bands. These bands correspond to the radiation from the different parts of the InGaN insertions. The second band in the photoluminescence spectrum is associated with the penetration of In into the GaN barrier. 10.18721/JPM.184.107 535.015; 535.37 photoluminescence nanowires indium gallium nitride molecular beam epitaxy https://physmath.spbstu.ru/article/2025.85.7/

CNF RUS 49-54 Rogachev Kirill rogachev.ka@dvfu.ru Samardak Alexey samardak.aiu@dvfu.ru 0009-0002-4092-135X Bazrov Michail bazrov.ma@dvfu.ru 0000-0002-9703-4623 Shishelov Aleksander shishelov.af@dvfu.ru 0000-0002-8954-8413 Sobirov Mukhammad sobirov.mi@dvfu.ru 0000-0002-1619-3666 Ognev Alexey ognev.av@dvfu.ru Samardak. Alexandder samardak.as@dvfu.ru Curvature-induced localization of magnetic domains in thin multilayer magnetic films on the surface of porous alumina The curvature of the ferromagnetic nanostructure is among its most important properties because of the great influence on its magnetic behavior, induced by strong shape magnetic anisotropy. In this work, we discuss the preparation and investigation of the magnetic properties of Pt/[Co/Pt]x9/Pt thin films on the surface of convex (nanodomes) and concave (nanopits) nanorelief, in the form of anodized aluminum oxide and aluminum matrices with an etched anodized oxide layer, respectively. For all samples, the presence of perpendicular magnetic anisotropy was observed, which was also observed in the reference samples on the smooth surface of SiO2. We show that an increase of the anodizing voltage leads to an increase in the interpore distance and curvature of the surface, which has a great influence on the coercive force and residual magnetization. In addition, we present the study of magnetic configuration of the obtained films, which showed the presence of the localization of magnetic domains on nanodomes and possible presence of skyrmions. 10.18721/JPM.184.108 537.622 porous oxide matrices anodizing thin films skyrmions https://physmath.spbstu.ru/article/2025.85.8/

CNF RUS 55-61 0009-0002-3519-4418 Turpak Aleksandr turpak.aa@dvfu.ru 0009-0009-4554-3053 Pashenko Aleksandr pashenko.ase@dvfu.ru 0009-0006-2778-8143 Prikhodchenko Alena Tarasov Egor tarasov.ev@dvfu.ru Chernousov Nikolay chernousov.nn@dvfu.ru Kuznetsova Mariya kuznetcova.mal@students.dvfu.ru 0000-0002-2697-8563 Davydenko Aleksandr davydenko.av@dvfu.ru Interfacial ferromagnetism in sputtered Pt/Gd/Pt system at room temperature The magnetic properties of ultrathin Pt/Gd/Pt films prepared by magnetron sputtering were investigated. The Gd layer thickness varied from 1 to 15 nm. At room temperature, the samples exhibited a weak saturation magnetization, predominantly of interfacial origin. The measured interfacial magnetic moment was 14.5 μergG–1cm–2. The contribution of bulk Gd layers to the saturation magnetization was found to be negligible. The shape of the hysteresis loops did not depend on the Gd layer thickness. Crystallization into a face-centered cubic structure was observed only for the 15 nm Gd layer. The results of this study emphasize the importance of interfacial ferromagnetism in the Pt/Gd/Pt system.  10.18721/JPM.184.109 539.216.2 gadolinium superparamagnetism multilayer films magnetization magnetic susceptibility magnetic ordering temperature size-dependent magnetic properties https://physmath.spbstu.ru/article/2025.85.9/

CNF RUS 62-66 0000-0002-7566-2522 Sibirev Nikolai Ilkiv Igor fiskerr@ymail.com Ubyivovk Evgeny ubyivovk@gmail.com Alferov University Soshnikov Ilya ipsosh@beam.ioffe.ru

St. Petersburg, Russian Federation

St. Petersburg State University Shtrom Igor i.shtrom@spbu.ru

St. Petersburg, Russian Federation

Reznik Rodion moment92@mail.ru Brukhanova Vera brukhanova@mail.spbu.ru Cirlin George george.cirlin@mail.ru MBE growth of GaAs nanowires with a silicon rich particle on the top The paper discusses the low-temperature growth of gallium arsenide (GaAs) nanowires on a silicon substrate initiated by a thin layer of lead. Typically, the growth of III-V semiconductor nanowires occurs via a vapor-liquid-solid mechanism with a droplet at the tip of the nanowire. The particles on the nanowire's tip act as physical catalysts, reducing the nucleation barrier. In case of GaAs nanowire, the droplet at the tip typically consists of Ga and a foreign catalyst. However, at a low growth temperature of 350 °C, a different situation was observed. The particle at the nanowire tip was found to contain a high concentration of arsenic. This suggests that the mechanism of nanowire formation is different from the classic vapor-liquid-solid process. The particle at the tip turned out to be a mixture of silicon and arsenic, rather than lead and gallium, indicating that the growth process followed a vapor-solid-solid mechanism. 10.18721/JPM.184.110 538.975 nanowires lead initiated growth silicon catalyzed growth Vapor-Solid-Solid mechanism molecular beam epitaxy https://physmath.spbstu.ru/article/2025.85.10/

CNF RUS 67-72 Kuznetsova Mariya kuznetcova.mal@students.dvfu.ru 0009-0002-3519-4418 Turpak Aleksandr turpak.aa@dvfu.ru Kozlov Aleksei kozlov.ag@dvfu.ru 0009-0006-2778-8143 Prikhodchenko Alena Magnetic structure of bilayer systems of thin films Pt/Co/(CoO) Effect of oxidation ferromagnet Co layer on magnetic parameters of thin polycrystalline bilayers Pt/Co/(CoO)/Pt films have been studied. Films was obtained by magnetron sputtering. It is established that the oxidation of the cobalt layer leads to an increase in perpendicular magnetic anisotropy (PMA) in comparison with non-oxidized system also the order of oxidation layer is important. Heat treatment causes a decrease in PMA and an increase in magnetization, which is explained by interlayer diffusion and the formation of a Pt-Co alloy. Structural XRR-analysis showed that oxidation increases the thickness of the Co/CoO layer and reduces the roughness of the adjacent layers. The dependence of the coercive force and anisotropy on the oxidation sequence of the layers is found, which indicates the importance of the structural organization for controlling magnetic properties. The results demonstrate the promise of controlled oxidation in PMA tuning and exchange interaction in Pt/Co systems, which can be used in spintronic devices, including skyrmion memory and elements controlled by spin orbital momentum. 10.18721/JPM.184.111 537.9 perpendicular magnetic anisotropy Pt/Co multilayer structures cobalt oxidation spin-orbit interaction X-ray reflectometry domain structure https://physmath.spbstu.ru/article/2025.85.11/

CNF RUS 73-78 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru 0000-0001-5386-1013 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Konstantin galkinkn@iacp.dvo.ru 0000-0003-4300-0070 Kropachev Oleg chernobez@gmail.com Dotsenko Sergei A. Sergei docenko@iacp.dvo.ru Ca5Si3 film MBE growth on Si(111) substrate: structure and optical properties In this work calcium silicide films grown by MBE method on a Si(111) substrate at a temperature of 500 °C with deposition flux ratios NCa : NSi = 3.49, 3.98, the formation of a epitaxial Ca5Si3 film with a thickness of up to 40 nm was detected, which was proven by XRD method. Reflection peaks in the region of interband transitions at 2.2, 2.75, 3.57 and 4.4 eV, a semi-metallic character of reflection at energies less than 0.5 eV, partial transmittance at 0.4−1.25 eV and a unique phonon structure with Raman shifts at 102, 110, 124, 160, 190, 220, 241, 344 and 379 cm−1 were detected for the first time in the reflection and Raman spectra of the Ca5Si3 film. 10.18721/JPM.184.112 539.23+539.26+535.39 silicon Ca5Si3 MBE growth film crystal structure optical functions IR transparency free carrier absorption https://physmath.spbstu.ru/article/2025.85.12/

CNF RUS 79-86 0000-0002-5474-5281 Amur State University Fomin Dmitriy e-office@yandex.ru 0009-0009-5104-5966 Amur State University Polyakov Aleksey polyakov_a_1999@mail.ru 0009-0004-6651-1468 Sholygin Ilya ilia.sholygin235@bk.ru

Amur State University

0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru 0000-0001-5386-1013 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Konstantin galkinkn@iacp.dvo.ru Optical, phononic and semiconductor properties of magnesium silicide films formed on silicon by layer-by-layer (Mg+Si) reactive epitaxy Magnesium silicide films were formed on n-type Si (111) substrates with resistivities ranging from 2 to 15 Ohm·cm (samples 1 and 2) and from 0.1 to 0.5 Ohm·cm (samples 3 and 4) using reactive epitaxy with layer-by-layer deposition of magnesium and silicon layers at a temperature of 250 °C. The article presents the results of a study of the morphology, optical and phononic properties, and the band gap of samples containing magnesium silicide films with thicknesses of 496, 682, 1143, and 414 nm, according to SEM data on a cross section. Atomic force microscopy showed that the films of all samples were formed by the Volmer-Weber mechanism, with the islands coalescing into clusters and grains. The island area of the film of the first sample ranges from 0.12 to 0.48 μm2, the second – from 0.02 to 0.06 μm2, the third – from 0.01 to 0.04 μm2, and the fourth – from 0.04 to 0.09 μm2. The islands coalesce into clusters and grains. In all grown films, Raman scattering (RS) peaks were detected at 258, 348, and 693 cm−1, which correspond to the formation of Mg2Si. In the IR spectra, the minimum transmittance at a wavenumber of 270 cm−1 varies from 0.04 to 0.01, which corresponds to an increase in the absorption of IR photons with an increase in the thickness of the Mg2Si films in the grown samples. The reflection and transmission spectra of the grown films revealed both interference peaks (below 1.5 eV) and a peak with an energy of 2.2–2.3 eV, corresponding to the interband transition in Mg2Si. Based on the infrared absorption spectra, the indirect band gap width was calculated for each film: 0.80 and 0.86 eV for samples 1 and 2; 0.77 and 0.79 eV for samples 3 and 4. 10.18721/JPM.184.113 538.975 + 681.782.473 + 535-15 + 535.375.54 magnesium silicide nanofilms optical spectra band gap surface morphology https://physmath.spbstu.ru/article/2025.85.13/

CNF RUS 87-92 0000-0001-8974-2235 Markin Nikita markkin.ns@gmail.com 0000-0003-3120-3401 Gordeev Ivan gordeev@jinr.ru 0000-0002-5889-3409 Ivannikov Sergey fyajkfqn@mail.ru Samardak Alexey samardak.aiu@dvfu.ru Samardak. Alexandder samardak.as@dvfu.ru 0000-0002-1619-3666 Ognev Alexey ognev.av@dvfu.ru Nanoparticle size and quantity impact on X-ray induced secondary emission for magnetite-gold systems The work presents the results of Monte Carlo modeling (PHITS) of irradiation of Fe3O4-SiO2-Au nanoparticles – promising agents for enhancing the effectiveness of radiation therapy with X-ray radiation. Within the model of a single nanoparticle in a water phantom, it was shown that, assuming a uniform distribution of gold nanoparticles over the surface of the adhesion layer, the particle density and their size do not have a significant impact on the efficiency of therapeutic X-ray beam conversion. The main factors determining the configuration of dose fields are the chemical composition of the nanoparticles and the energy of the primary photon beam. 10.18721/JPM.184.114 539.1.072+615.849.5 gold nanoparticles Monte Carlo simulation radiosensitizer radiation therapy https://physmath.spbstu.ru/article/2025.85.14/

CNF RUS 93-98 Volkova Lidiya lidiya.volkova.96@mail.ru Grishin Timofey grishin.t@outlook.com Institute of Nanotechnologies of Microelectronics of the RAS Dudin Alexander dudin.a@inme-ras.ru

Moscow, Russian Federation

0000-0002-5200-9299 Nazarkina Yulia engvel@mail.ru Dubkov Sergey sv.dubkov@gmail.com Gromov Dmitry gormadima@gmail.com Gavrilov Sergey pcfme@miee.ru Fabrication of TiO2 nanopillar arrays and their structural evolution We report the fabrication and structural study of TiO2 nanopillar arrays produced by two-step anodization of Al/TiN bilayer (1000 nm/250 nm). The as-prepared nanopillars are amorphous; their structural evolution was investigated upon air annealing in the 300–800 °C range. Annealing at 300 °C initiates crystallization, at 500 °C predominantly nanocrystalline anatase is formed, while at 800 °C grain growth and coexistence of anatase and rutile are observed. The array morphology (diameter ~20 nm, pitch ~50 nm, height ~150 nm) remains intact even after high-temperature treatment. These results indicate that ~500 °C is an optimal annealing condition to obtain pure anatase while preserving the nanostructured geometry, which is important for photocatalytic applications and for using TiO2 nanopillar arrays as platforms for hybrid SERS-substrates. 10.18721/JPM.184.115 538.911+546.82+544.6+544.478 TiO2 nanopillars anodization photocatalysis anatase rutile https://physmath.spbstu.ru/article/2025.85.15/

CNF RUS 99-104 0000-0002-6254-0972 Luniakov Yuriy luniakov@iacp.dvo.ru Magnesium based Si-Ge alloys under pressure: DFT evolutionary search results The search of minimal enthalpy structures of ternary magnesium alloys of different stoichiometry MgxSiyGez under pressure P ≤ 6 GPa has been performed using the software suite USPEX implementing the evolution algorithm combined with the density functional theory (DFT) approach. The evolutionary search has yielded new possible ternary compounds of the stoichiometries Mg12Ge3Si, Mg6Ge4Si3, Mg6Ge3Si4, Mg6GeSi3, Mg4Ge3Si2, Mg4Ge3Si2, Mg4SiGe, and Mg2GeSi, which have negative enthalpy of formation at pressures in the range of 0 to 10 GPa and which are not substitution solutions of Ge on Mg2Si matrix (or Si on Mg2Ge matrix). These compounds have metallic properties and formation enthalpies comparable to those of binary silicides Mg2Si. Phonon spectra investigations indicate that only first five of them are stable showing no imaginary frequencies. 10.18721/JPM.184.116 538.91+539.89+544.22 MgxSiyGez crystal structure hydrostatic pressure evolutionary search density functional theory https://physmath.spbstu.ru/article/2025.85.16/

CNF RUS 105-110 Grishin Timofey grishin.t@outlook.com Volkova Lidiya lidiya.volkova.96@mail.ru Institute of Nanotechnologies of Microelectronics of the RAS Dudin Alexander dudin.a@inme-ras.ru

Moscow, Russian Federation

Dubkov Sergey sv.dubkov@gmail.com Gromov Dmitry gormadima@gmail.com Gavrilov Sergey pcfme@miee.ru Methodology for quantitative analysis of interparticle spacings in arrays of nanoparticles on solid-state substrates A methodological approach is presented for quantitative analysis of geometric parameters of nanoparticle arrays, in particular the measurement of interparticle spacings, using a Delaunay triangulation algorithm. The development is motivated by the critical role of interparticle spacings in the formation of “hot spots” in surface-enhanced Raman scattering (SERS). The algorithm for automatic identification of nanoparticle centers in microscopy images and calculation of distances between nearest neighboring particles via Delaunay triangulation is described, along with data filtering criteria and the accounting of boundary effects to improve statistical reliability. The methodology is demonstrated on self-assembled arrays of nanoparticles obtained by thermal annealing of thin Ag films. The advantages of the proposed method and its limitations are discussed. The originality of the approach and its applicability to nanometrology and morphological analysis of nanostructured surfaces are emphasized. 10.18721/JPM.184.117 538.911+546.82+544.6+544.478 nanoparticles interparticle spacings Delaunay triangulation SERS hot spots nanometrology surface morphology https://physmath.spbstu.ru/article/2025.85.17/

CNF RUS 111-116 Fedyaj Vladislav fedyajve@iae.nsk.su 0000-0001-5107-0111 Bronnikov Kirill bronnikovkirill@gmail.com Simanchuk Andrei simmk@yandex.ru Lazarenko Petr aka.jum@gmail.com Yakubov Alexey alexsey007@mail.ru 0000-0001-6878-679X Zhizhchenko Alexey 0000-0002-5376-5555 Kuchmizhak Aleksandr 0000-0002-9043-3197 Dostovalov Alexander dostovalov@iae.nsk.su Formation of 2D laser-induced periodic surface structures on metal and phase change materials The laser-induced periodic surface structures (LIPSS) represent an effective technique to modify optical, mechanical, and chemical surface characteristics. While most studies focus on one-dimensional (1D) LIPSS formation on bulk and thin-film materials with orientation direction depending on laser polarization state, more complex morphologies are highly demanded for advanced applications. Here, we demonstrate the formation of two-dimensional (2D) square and hexagonal LIPSS on metal (Cr, Hf) and phase-change material (Ge2Sb2Te5) thin films, driven by thermochemical and plasmonic mechanisms, respectively. These findings expand the potential for applications in tunable photonic devices, diffractive optical elements, and structurally colored metals with 2D anisotropic optical properties. 10.18721/JPM.184.118 535.8 LIPSS GST femtosecond laser pulses self-organized structures surface structuring https://physmath.spbstu.ru/article/2025.85.18/

CNF RUS 117-122 Shuleiko Dmitrii shuleyko.dmitriy@physics.msu.ru 0000-0001-8017-9984 Sokolovskaya Olga sokolovskayaoi@my.msu.ru 0000-0002-6363-4970 Martyshov Mikhail martyshov@physics.msu.ru 0000-0003-3281-8352 Saratov State University Serdobintsev Alexey alexas80@bk.ru

Saratov, Russian Federation

0000-0001-6780-9865 Volkovoynova Larisa 0000-0002-4759-5828 Venig Sergey Sergey.Venig@gmail.com 0000-0002-2608-7621 Pakholcuk Petr petr.pakholchuk@mail.ru Kuzmin Evgenii e.kuzmin@lebedev.ru Zabotnov Stanislav zabotnov@physics.msu.ru Kashkarov Pavel kashkarov@physics.msu.ru Femtosecond laser modification of amorphous silicon films for photovoltaic and polarization optics applications Femtosecond laser structuring is a promising method for obtaining amorphous-crystalline silicon (a-Si/c-Si) heterojunction in a-Si thin films, as well as surface structures with optical anisotropy. Depth-resolved Raman spectroscopy of an a-Si film irradiated at laser fluence of 0.1 J/cm2, which is below a-Si ablation threshold, revealed its surface crystallization with the crystallized layer characteristic depth of 45 ± 5 nm. As a result of such laser irradiation, the electric current rectification coefficient in the film, determined from electrophysical measurements, increased from 2.7 to 13.6 indicating possible formation of an a-Si/c-Si heterojunction. The presence of 10-nm-thick Al coating decreases the number of pulses per unit area required for a-Si crystallization by 2.5 times. Optical anisotropy of the laser-crystallized a-Si films is manifested in their optical retardance of 280 ± 40 nm, caused by the formation of one-dimensional surface relief with the period of 1100 ± 50 nm. 10.18721/JPM.184.119 535.21 femtosecond laser pulses amorphous silicon heterojunction laser-induced periodic surface structures optical retardance https://physmath.spbstu.ru/article/2025.85.19/

CNF RUS 123-127 0000-0003-2127-2462 Bezruk Mikhail bezmisha@list.ru 0000-0003-0869-0993 Romashko Roman romashko@dvo.ru 0000-0001-5398-9703 Efimov Timofey efimov@dvo.ru 0000-0002-3521-5269 Storozhenko Dmitry dbrados@dvo.ru Model of orthogonal two-wave mixing in photorefractive crystal of cubic symmetry with optical activity We developed a physical model describing the process of two-wave vectorial mixing in optically active photorefractive crystal of cubic symmetry for an orthogonal scheme of interaction. Using the model, we calculated the two-wave interaction in a photorefractive crystal of bismuth silicate Bi12SiO20 having optical activity. We have determined conditions at that polarization changes don’t influence two-wave mixing. It was found that it is possible to define the parameters of the crystal and interacting waves for the quasi-polarization independence mode, when changes of interferometer output signal caused by polarization instability of the signal wave is reduced to a minimum (no more than 3%). We developed a physical model describing vectorial two-wave mixing in optically active, cubic-symmetry photorefractive crystals for an orthogonal interaction geometry. We apply the model to bismuth silicate (Bi12SiO20), an optically active photorefractive crystal. We further show that by appropriately selecting crystal and wave parameters, a quasi-polarization-independent regime can be achieved, in which interferometer output fluctuations caused by signal-wave polarization instability are minimized to no more than 3%. 10.18721/JPM.184.120 535.512 photorefractive crystal adaptive interferometer dynamic hologram polarization optical activity https://physmath.spbstu.ru/article/2025.85.20/

CNF RUS 128-132 Plyusnin Nikolay plusnin@dvo.ru Physical deposition of atomic layers and growth of extremely thin films: four-decade series of the refractory metal-silicon system studies The article is devoted to the author's four-decade series of studies on growing extremely thin films (ETF) in the refractory metal-silicon system. To obtain ETF, it was necessary to develop a new growth method – physical atomic-layer deposition (PALD), which uses the technique of pulsed evaporation of adsorbate from a flat source located parallel to the substrate. Compared to the traditional molecular beam deposition (MBE) method, PALD reduces the vapor temperature, produces thinner layers, and expands the range of materials produced. The study showed that, with PALD using reduced substrate and vapor temperatures, not only two-dimensional surface phases (2D-SP) can form, but also two-dimensional (2D-SWL) and, subsequently, nanophase (ν-SWL) wetting layers (SWL). The series investigated the growth of ETFs Cr, Co, Fe, Cu and their silicides on Si(111) and Si(001), as well as the growth of Si on Si(111)7×7 and CrSi2(0001). Single-layer and multilayer (Co-Cu-Fe-Cu) nanofilms were obtained. The main causes of phase transitions in SWL have been identified, and the role of vapor pressure and substrate temperatures in the structure and composition of SWL and the boundary layer of the substrate has been shown. The study showed that the films obtained by the PALD method have unique electrical, optical and magnetic properties and are promising for use in micro- and nanoelectronics nanodevices. 10.18721/JPM.184.121 539.23+548.5 atomic-layer deposition surface phases wetting layers phase transitions extremely ultrathin films multilayer nanolayers Cr Co Fe Cu silicides Si(111) and Si(001) electrical optical and magnetic properties https://physmath.spbstu.ru/article/2025.85.21/