<?xml version="1.0" encoding="utf-8"?>
<journal>
  <titleid/>
  <issn>2304-9782, 2618-8686, 2405-7223</issn>
  <journalInfo lang="ENG">
    <title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</title>
  </journalInfo>
  <issue>
    <volume>18</volume>
    <number>3.2</number>
    <altNumber> </altNumber>
    <dateUni>2025</dateUni>
    <pages>1-321</pages>
    <articles>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>11-15</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0001-7143-6686</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kusnetsov</surname>
              <initials>Alexey</initials>
              <email>alkuznetsov1998@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Borodin</surname>
              <initials>Bogdan </initials>
              <email>brborodin@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Toksumakov</surname>
              <initials>Adilet</initials>
              <email>adilet.toksumakov@phystech.edu</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Ghazaryan</surname>
              <initials>Davit</initials>
              <email>dav280892@gmail.com</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0002-8143-4606</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Alekseev</surname>
              <initials>Prokhor</initials>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0001-7223-7232</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Bolshakov</surname>
              <initials>Alexey</initials>
              <email>acr1235@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Scanning probe lithography implementation for InGaS3 optical waveguides fabrication</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Integrated nanophotonics faces challenges in matching the component density of electronics, largely due to the size limitations of silicon-based photonics. High-refractiveindex materials like InGaS3 offer a promising solution for miniaturized visible/UV photonic circuits. This study demonstrates the fabrication of InGaS3 waveguides using mechanical scanning probe lithography (m-SPL), overcoming limitations of conventional lithography techniques. Test cutting in various directions shows that m-SPL trench quality in InGaS3 depends on crystallographic orientation, with zigzag-aligned force producing clean edges while jagged armchair-direction leads to fractures. The method allows to simultaneously determine crystallographic axes and optimize waveguides side walls quality. This approach establishes m-SPL as a viable route for nanostructuring unconventional materials where standard etching protocols fail, advancing high density integrated photonics.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.201</doi>
          <udk>538.911</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>InGaS3</keyword>
            <keyword>scanning probe lithography</keyword>
            <keyword>waveguides</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.1/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>16-23</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-7845-0592</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Mahmoodpoor </surname>
              <initials>Abolfazl </initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-8143-4606</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Alekseev</surname>
              <initials>Prokhor</initials>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Furasova</surname>
              <initials>Aleksandra</initials>
              <email>aleksandra.furasova@metalab.ifmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-9257-6183</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Makarov</surname>
              <initials>Sergey</initials>
              <email>s.makarov@metalab.ifmo.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Mechanism of resistive state switching in a non-filamentary memory device made of halide perovskite</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this study, we present a comprehensive numerical investigation of the modulation of the Schottky barrier in cesium lead bromide (CsPbBr3) perovskite, focusing on the role of internal ionic charge carriers. We observe the pronounced hysteretic behavior in the currentvoltage (I–V) characteristics of a metal-perovskite-metal configuration, where a 100 nm thick perovskite layer is sandwiched between chemically inert Schottky contacts. The inert nature of these contacts allows for the accumulation of mobile ions at the contact-perovskite interface without introducing secondary ion injections, thereby preventing any conducting filament formation. By implementing a one-dimensional drift-diffusion model, we simulate the dynamic evolution of mixed ionic-electronic charge carriers during I–V measurements. Our findings reveal that resistive state switching (RSS) is predominantly influenced by ion accumulation at the interfaces, which effectively modulates the Schottky barrier and increases carrier tunnelling probability. Additionally, our analysis highlights the significance of polarized accumulated ions in achieving a more precise interpretation of experimental I–V curves.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.202</doi>
          <udk>538.915</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>semiconductor device simulation</keyword>
            <keyword>numerical modelling</keyword>
            <keyword>perovskite memristor</keyword>
            <keyword>mobile ions in perovskite</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.2/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>24-28</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-6855-0274</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Obraztsova </surname>
              <initials>Anna </initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0004-1245-1391</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Voitovich </surname>
              <initials>Veronica</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0004-5673-4756</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Derkach </surname>
              <initials>Nikolay </initials>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-2313-9051</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Pivovarova</surname>
              <initials>Antonina</initials>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0002-7025-3527</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research University “Higher School of Economics”</orgName>
              <surname>Komarov</surname>
              <initials>Sergey</initials>
              <email>serega.komarow@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Kalyuzhniy</surname>
              <initials>Nikolai</initials>
              <email>nickk@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Mintairov</surname>
              <initials>Sergei</initials>
              <email>mintairov@scell.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Il'inskaya</surname>
              <initials>Natalya</initials>
              <email>Natalya.Ilynskaya@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <surname>Yakovlev</surname>
              <initials>Yuri</initials>
              <email>Yakovlev@iropto.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <orgName>National Research University ‘Higher School of Economics”</orgName>
              <surname>Makhov</surname>
              <initials>Ivan</initials>
              <email>imahov@hse.ru</email>
            </individInfo>
          </author>
          <author num="011">
            <individInfo lang="ENG">
              <surname>Kryzhanovskaya Natalia V.</surname>
              <initials>Natalia</initials>
              <email>nkryzhanovskaya@hse.ru</email>
            </individInfo>
          </author>
          <author num="012">
            <authorCodes>
              <scopusid>35379962200</scopusid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Physical Technical Institute of the Russian Academy of Sciences</orgName>
              <surname>Zhukov</surname>
              <initials>Alexey</initials>
              <email>zhukov@beam.ioffe.ru</email>
              <address>Russia, 194021, St.Petersburg, Polytechnicheskaya 26</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Microdisk lasers with a bridge contact pad formed by wet chemical etching</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This study presents an approach for fabricating microlasers with quantum dots on GaAs substrates, featuring a disk resonator, a bridge-type electrical contact, and a supporting mesa structure formed by wet chemical etching. The influence of under-etched ledge in the disk cavity, formed under the metal bridge, as well as the low lateral current spreading due to small electrical contact area on the cavity surface was investigated. It was found that cleaving the under-etched ledge in the disk cavity significantly reduced the threshold current leading to the possibility to continuous-wave laser operation. The low lateral current spreading associated with small metal contact on the disk surface was confirmed by the spatially resolved electroluminescence studies in the cleaved half-disk microlasers.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.203</doi>
          <udk>621.373.826</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>microlasers</keyword>
            <keyword>bridge contact</keyword>
            <keyword>whispering gallery modes</keyword>
            <keyword>wet chemical etching</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.3/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>29-32</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0004-5673-4756</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Derkach </surname>
              <initials>Nikolay </initials>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>National Research University ‘Higher School of Economics”</orgName>
              <surname>Makhov</surname>
              <initials>Ivan</initials>
              <email>imahov@hse.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-6855-0274</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Obraztsova </surname>
              <initials>Anna </initials>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0004-1245-1391</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Voitovich </surname>
              <initials>Veronica</initials>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0002-7025-3527</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research University “Higher School of Economics”</orgName>
              <surname>Komarov</surname>
              <initials>Sergey</initials>
              <email>serega.komarow@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Fominykh</surname>
              <initials>Nikita A.</initials>
              <email>nfominykh@hse.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Chernenko </surname>
              <initials>Natalia</initials>
              <email>nchernenko@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Shandyba </surname>
              <initials>Nikita </initials>
              <email>shandyba.nikita@gmail.com</email>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <surname>Solodovnik</surname>
              <initials>Maxim</initials>
              <email>solodovnikms@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <surname>Kryzhanovskaya Natalia V.</surname>
              <initials>Natalia</initials>
              <email>nkryzhanovskaya@hse.ru</email>
            </individInfo>
          </author>
          <author num="011">
            <authorCodes>
              <scopusid>35379962200</scopusid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Physical Technical Institute of the Russian Academy of Sciences</orgName>
              <surname>Zhukov</surname>
              <initials>Alexey</initials>
              <email>zhukov@beam.ioffe.ru</email>
              <address>Russia, 194021, St.Petersburg, Polytechnicheskaya 26</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Spectral studies of electroluminescence have been conducted on edge-emitting lasers with different cavity lengths. Mirrors were formed by focused ion beam technique and cleaving. A wide range of injection currents was used. Active region of the lasers consists of dense arrays of InGaAs/GaAs quantum dots, which enabled to obtain lasing in stripe lasers with cavities as short as 45 µ m. A noticeable blueshift of the lasing wavelength was observed with the cavity length decrease, accompanied by an increase in the threshold current density. The maximum modal gain was estimated to be at least 267 cm-1.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.204</doi>
          <udk>621.373.826</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>microlaser</keyword>
            <keyword>quantum dots</keyword>
            <keyword>edge-emitter</keyword>
            <keyword>focused ion beam</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.4/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>33-39</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Rayanova</surname>
              <initials>Kamilla</initials>
              <email>raanovakamilla@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Babenko</surname>
              <initials>Sofiya</initials>
              <email>sofi.bb@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Bryleva</surname>
              <initials>Anna</initials>
              <email>anniebryleva@yandex.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Kanaev</surname>
              <initials>Kirill</initials>
              <email>kir-kv2005@mail.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Kudryavtsev</surname>
              <initials>Oleg</initials>
              <email>oleg6565657@gmail.com</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Nigmatullina</surname>
              <initials>Razalina</initials>
              <email>razalina.n2004@gmail.com</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Sudakova</surname>
              <initials>Alexandra</initials>
              <email>asudakova12@gmail.com</email>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Komarov </surname>
              <initials>Ivan</initials>
              <email>master_kom@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Thin large-area graphene oxide film formation from multicomponent suspensions</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this study, we investigate the influence of additional organic components of the graphene oxide suspension on wetting properties of PET substrates. Insufficient wettability of polymer substrates is one of the important challenges for flexible electronic devices based on graphene derivatives. In our research we showed a possibility to enhance the wettability of graphene oxide suspensions by incorporating additional organic components. Based on solubility parameters we choose N-methylpyrrolidone, dimethylacetamide, and two types of lacquer paint thinners as additional components. In all instances, we observed a successful reduction in the contact angle.&#13;
We also analyzed the drying time of multicomponent dispersions. Depending on the component ratios and the type of dispersion, the drying time can vary significantly, ranging from 3 to over 40 times, that is important for choosing the optimal deposition method. The stability of dispersions containing N-methylpyrrolidone and dimethylacetamide was confirmed for more than two months, while dispersions with lacquer paint thinners remained stable for approximately 1.5 months.&#13;
We showed possibility of formation of large-area graphene oxide films on PET substrate with the use of multicomponent graphene oxide suspensions. In case of concentrations higher than 0.9 mg/ml we observed formation of uniform films that covers the whole substrate.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.205</doi>
          <udk>620.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>contact angle</keyword>
            <keyword>dispersion medium</keyword>
            <keyword>graphene oxide</keyword>
            <keyword>thin films</keyword>
            <keyword>wetting</keyword>
            <keyword>PET</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.5/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>40-44</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Belov </surname>
              <initials>Yaroslav </initials>
              <email>yadbelov@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Amirov</surname>
              <initials>Ildar</initials>
              <email>ildamirov@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Zimin</surname>
              <initials>Sergey</initials>
              <email>zimin@uniyar.ac.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Calculation of the volume of nano- and microstructures formed on the surface of PbTe during ion-plasma treatment using machine learning</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The formation of porous Pb nano- and microstructures on the surface of PbTe films during low-energy ion-plasma treatment has been studied using scanning electron microscopy (SEM) combined with machine learning-based image analysis. PbTe epitaxial films with (111) crystallographic orientation were exposed to argon plasma at an ion energy of approximately 25 eV for varying durations (60–240 s). SEM imaging at a tilt angle of 70° enabled three-dimensional size estimation of the formed structures, which, together with automated image processing using the DLgram01 deep learning service, allowed for precise calculation of particle number, area, height, and volume. In this paper, a comparative analysis of the parameters of the Pb structure on the surface of lead telluride films with the orientation (111) and PbTe single crystals with the orientation (100) is carried out. This study demonstrates the effectiveness of machine learning for quantitative analysis of surface nanostructures after lowenergy argon plasma treatment of PbTe surface.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.206</doi>
          <udk>533.924</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>argon plasma</keyword>
            <keyword>lead telluride</keyword>
            <keyword>nanostructuring</keyword>
            <keyword>volume of material</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.6/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>45-48</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0007-6952-4987</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Khrul </surname>
              <initials>Sofia </initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-1835-1629</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Shubina</surname>
              <initials>Kseniia</initials>
              <email>rein.raus.2010@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Pirogov</surname>
              <initials>Evgeny</initials>
              <email>zzzavr@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-3640-677X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kaveev</surname>
              <initials>Andrey</initials>
              <email>kaveev@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Nikitina</surname>
              <initials>Ekaterina </initials>
              <email>mail.nikitina@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effect of rapid thermal annealing on the properties of GaPN(As)-based heterostructures grown on silicon substrates</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The unique properties of dilute nitrides, such as GaPN(As), make them highly promising for use in solar cells and optoelectronic devices. In this work we report on the investigation of the effects of rapid thermal annealing on the structural and optical properties of GaPN(As) solid solutions. The GaPN(As)-based heterostructures were grown on a silicon substrates by plasma assisted molecular beam epitaxy. The effect of rapid thermal annealing on the properties of these materials was studied using photoluminescence spectroscopy and X-ray diffraction analysis.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.207</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>dilute nitride semiconductors</keyword>
            <keyword>GaPN(As)</keyword>
            <keyword>rapid thermal annealing</keyword>
            <keyword>photoluminescence</keyword>
            <keyword>X-ray diffraction</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.7/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>49-52</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Abramov </surname>
              <initials>Artem </initials>
              <email>artem.abramov@metalab.ifmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (MIPT)</orgName>
              <surname>Chiglintsev</surname>
              <initials>Emil</initials>
              <email>chiglintsev.eo@phystech.edu</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Oskolkova</surname>
              <initials>Tatiana</initials>
              <email>tatiana.oskolkova@metalab.ifmo.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Bandurin</surname>
              <initials>Denis</initials>
              <email>bandurin.d@gmail.com</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Iorsh</surname>
              <initials>Ivan</initials>
              <email>i.iorsh@metalab.ifmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (MIPT)</orgName>
              <surname>Chernov</surname>
              <initials>Alexander</initials>
              <email>a.chernov@rqc.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Kravtsov</surname>
              <initials>Vasily</initials>
              <email>vasily.kravtsov@metalab.ifmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Electrostatic control of correlated phases in spatially inhomogeneous two-dimensional moiré structures</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Two-dimensional moiré structures are a promising platform for quantum simulations. In 2D van der Waals twisted bilayers, a moiré superlattice acts as a periodic potential for capturing interlayer excitons, which opens new possibilities for constructing quantum correlated phases. In addition, precise control of electronic states in such structures is possible via electrostatic doping and application of out-of-plane electric fields. However, effects related to spatial inhomogeneity, which is often present in experimental samples of van der Waals heterostructures, are currently not well studied. Here we experimentally investigate correlated phases in a spatially inhomogeneous twisted WSe2/WS2 bilayer with electrostatically controlled free charge carrier density. Using photoluminescence (PL) spectroscopy, we locally detect multiple correlated phases and demonstrate continuous tuning of their energies via electric bias. Our results contribute towards the development of quantum simulators based on correlated phases in twisted van der Waals heterostructures.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.208</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>moiré superlattice</keyword>
            <keyword>2D semiconductors</keyword>
            <keyword>strongly correlated electronic states</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.8/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>53-56</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Shchenin </surname>
              <initials>Alexandr </initials>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Axenov</surname>
              <initials>Valerii</initials>
              <email>axenov.v@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Ankudinov</surname>
              <initials>Alexander</initials>
              <email>Alexander.Ankudinov@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Bert</surname>
              <initials>Nikolay</initials>
              <email>Nikolay.Bert@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Kalyuzhniy</surname>
              <initials>Nikolai</initials>
              <email>nickk@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Pirogov</surname>
              <initials>Evgeny</initials>
              <email>zzzavr@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Salii </surname>
              <initials>Roman </initials>
              <email>r.saliy@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Soshnikov</surname>
              <initials>Ilya</initials>
              <email>ipsosh@beam.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Vlasov</surname>
              <initials>Alexei</initials>
              <email>vlasov@scell.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Mintairov</surname>
              <initials>Alexander</initials>
              <email>amintairov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effect of Al concentration on the pyroelectric properties of AlGaInP2 alloys</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">CuPtB ordered AlGaInP2 alloys grown on GaAs by MOVCD epitaxy were studied by structural (X-ray diffraction, electron microscopy), optical (photoluminescence) and Kelvin probe microscopy methods. A strong dependence of the layer surface potential on the alloy composition was found. The effect of martensitic transition in the ordered AlGaInP2 layers was found to be in connection with the alloy composition: higher Al concentrations lead to an increase of the piezoelectric field changes and shorter recovery time (relaxation) of the layers after mechanical effect (cleavage).</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.209</doi>
          <udk>538.953</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>AlGaInP</keyword>
            <keyword>martensitic transition</keyword>
            <keyword>pyroelectric properties</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.9/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>57-59</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Eremenko</surname>
              <initials>Mikhail</initials>
              <email>eryomenko@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Shandyba </surname>
              <initials>Nikita </initials>
              <email>shandyba.nikita@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Chernenko </surname>
              <initials>Natalia</initials>
              <email>nchernenko@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Kirichenko </surname>
              <initials>Danil </initials>
              <email>dankir@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Balakirev</surname>
              <initials>Sergey</initials>
              <email>sbalakirev@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Solodovnik</surname>
              <initials>Maxim</initials>
              <email>solodovnikms@sfedu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Localized Ga droplets formation on nanopatterned silicon substrates</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, the effect of the modes of processing SiO2/Si substrates with a focused ion beam on the subsequent epitaxial growth of Ga droplets was investigated. It was shown that an increase in beam passes and ion dose led to a broadening of the pyramidal cavities and also affects the localization of Ga droplets. It was found that the use of additional preliminary processing of substrates in a hydrogen fluoride has a positive effect on the formation of gallium droplets inside the holes. The maximum degree of filling was observed at a hole size of about 350 nm.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.210</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>wet chemical etching</keyword>
            <keyword>silicon</keyword>
            <keyword>monolithic integration</keyword>
            <keyword>focused ion beam</keyword>
            <keyword>nanopatterning</keyword>
            <keyword>molecular beam epitaxy</keyword>
            <keyword>droplet epitaxy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.10/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>61-65</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Bondareva </surname>
              <initials>Polina </initials>
              <email>p.bondareva2016@yandex.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-6494-0147</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Shein</surname>
              <initials>Kirill</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-4861-2466</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Titchenko</surname>
              <initials>Anastasia </initials>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0008-4349-7332</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Izmaylov</surname>
              <initials>Ramil</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0003-2560-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research University “Higher School of Economics”</orgName>
              <surname>Gayduchenko</surname>
              <initials>Igor</initials>
              <email>igaiduchenko@hse.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Graphene photodetector integrated on an optical waveguide</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this paper we report on our progress on fabrication of graphene-based photodetectors integrated on an optical waveguide. Graphene is a unique material for detecting radiation due to its record low electron heat capacity and weak electron-phonon coupling. The obtained experimental data can be used to optimize modern graphene photodetectors and develop new ones.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.211</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>graphene</keyword>
            <keyword>photodetectors</keyword>
            <keyword>waveguides</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.11/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>66-71</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0002-0252-9322</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Khomlenko </surname>
              <initials>Dmitriy </initials>
              <email>khomlenko@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-1456-5139</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Il`in</surname>
              <initials>Oleg</initials>
              <email>oiilin@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-8023-8283</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Il`ina </surname>
              <initials>Marina</initials>
              <email>mailina@sfedu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Influence of electrode geometry on growth of horizontally aligned carbon nanotubes</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This work investigates the influence of electrode geometrical parameters on the electric-field-strength distribution required for the directed growth of horizontally aligned carbon nanotubes by plasma-enhanced chemical vapor deposition. Optimal electrode parameters that provide maximal electric field strength and high efficiency of aligned nanotube growth have been determined. The influence of electrode shape (rectangular, semicircular, and triangular) on the field-strength distribution and nanotube alignment is demonstrated. The results contribute to optimizing the growth process of horizontally aligned carbon nanotubes for applications in sensors and nanopiezotronic devices.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.212</doi>
          <udk>546.26–537.226.86</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>carbon nanotubes</keyword>
            <keyword>horizontal growth</keyword>
            <keyword>PECVD</keyword>
            <keyword>electric field</keyword>
            <keyword>electrode</keyword>
            <keyword>modelling</keyword>
            <keyword>directed growth</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.12/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>72-75</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0005-9636-3870</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Gorokhov </surname>
              <initials>Sergey </initials>
              <email>sgorohov@niime.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0004-3722-4865</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Reznik</surname>
              <initials>Alexander</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-1677-9122</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Rezvanov</surname>
              <initials>Askar</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">First-principles calculation of copper impurity diffusion in hexagonal ruthenium</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Ruthenium is a promising material for use in microelectronic devices as a diffusion barrier layer to prevent copper diffusion. However, there are few data on quantitative assessments of the diffusion coefficients of any impurities in hexagonal bulk Ru, which is the stable structural phase of Ru. In this work, we performed a density functional theory study of Cu impurity diffusion in bulk hexagonal Ru. Impurity diffusion coefficients are computed as a function of temperature using the ‘8-frequency model’, which provides the relevant impurity and solvent jump frequencies and correlation factors. The effect of temperature-dependent expansion of the ruthenium lattice volume is taken into account within the quasi-harmonic approximation. The Arrhenius equation for the diffusion coefficient is D|| = 6.12·10–5exp(–5.01 eV/kT) m2s–1 for diffusion within the basal plane and D⟂= 2.18·10–4exp(–5.11 eV/kT) m2s–1 for diffusion between adjacent basal planes in the lattice. Our calculations serve as a foundation for a more accurate understanding of experimental data.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.213</doi>
          <udk>544.034.24</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>impurity diffusion</keyword>
            <keyword>diffusion coefficient</keyword>
            <keyword>density functional theory</keyword>
            <keyword>quasiharmonic approximation</keyword>
            <keyword>ruthenium</keyword>
            <keyword>copper</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.13/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>76-80</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Anikina </surname>
              <initials>Maria</initials>
              <email>mari.a.nikina@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-7143-6686</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kusnetsov</surname>
              <initials>Alexey</initials>
              <email>alkuznetsov1998@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-7223-7232</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Bolshakov</surname>
              <initials>Alexey</initials>
              <email>acr1235@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Numerical modeling of optical transmittance of 2×2 directional couplers based on GaP nanowires</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this paper, the optical properties of the GaP nanowires-based directional X-coupler are investigated for the design and further fabrication of a passive nanophotonic device. Results of numerical calculations demonstrate how the coupling length, nanowires diameter, and the gap between them influence the spectral composition of the output signals. By optimizing these geometric parameters, efficient subwavelength directional X-couplers based on GaP nanowires can be fabricated for light control in photonic circuits.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.214</doi>
          <udk>535.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>photonics</keyword>
            <keyword>passive optical device</keyword>
            <keyword>directional coupler</keyword>
            <keyword>nanowires</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.14/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>81-85</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0006-5851-6175</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Bakhshaliev</surname>
              <initials>Ruslan</initials>
              <email>r.bakhshaliev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-1511-1128</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Khmelev</surname>
              <initials>Aleksandr</initials>
              <email>a.khmelev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Duplinsky</surname>
              <initials>Alexey</initials>
              <email>a.duplinsky@goqrate.com</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0002-2294-3731</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Barbyshev</surname>
              <initials>Konstantin</initials>
              <email>k.barbyshev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Merzlinkin </surname>
              <initials>Vitalii </initials>
              <email>merzlinkin@yandex.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0009-0006-4080-0442</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Levashov</surname>
              <initials>Sergey </initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Evaluation of the impact of atmospheric refraction on the bit error rate in the space-Earth optical communication channel</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Classical optical communication allows the design of a high-speed data transmission channel between the spacecraft and the ground station. Its advantages are high interference resistance, high energy efficiency, low detectability, and significant potential for speed enhancement compared to radio communication. However, optical communication has a few technological limitations. This study investigates the contribution of atmospheric refraction to the value of bit error rate (BER). Preliminary results show a decrease in the signal-to-noise ratio as a function of the spacecraft’s elevation angle, resulting in increased bit errors in data communication.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.215</doi>
          <udk>621.391.63</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>free-space optical communication</keyword>
            <keyword>space-Earth communication</keyword>
            <keyword>atmospheric refraction</keyword>
            <keyword>laser physics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.15/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>86-90</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Pleninger </surname>
              <initials>Maximilian </initials>
              <email>pleninger@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Balakirev</surname>
              <initials>Sergey</initials>
              <email>sbalakirev@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Solodovnik</surname>
              <initials>Maxim</initials>
              <email>solodovnikms@sfedu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Simulation of light propagation in waveguides coupled to hexagonal microcavities formed in the GaAs-based photonic crystal</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper presents the results of numerical simulation of the light-matter interaction in the GaAs-based photonic crystal (PhC). The study focuses on the coupled configurations of waveguides and hexagonal microcavities operating at a wavelength of 1.3 µm. A systematic investigation is conducted into the influence of the diameter of microcavity, its distance from the waveguide and the defect configuration on the distribution of the electric field strength within the PhC structure. It is shown that a spacing of 2 rows between the waveguide and 1.65-µm-diameter cavity allows achieving maximum electric field strength within the cavity. An introduction of a defect into the waveguide leads to a further increase in the electric field strength in the cavity, with an optimal radius of 209 nm.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.216</doi>
          <udk>537.876</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>photonic crystal</keyword>
            <keyword>waveguide</keyword>
            <keyword>microcavity</keyword>
            <keyword>GaAs</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.16/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>91-95</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>National Research Tomsk State University</orgName>
              <surname>Kukenov</surname>
              <initials>Olzhas</initials>
              <email>okukenov@mail.ru</email>
              <address>Tomsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0008-8052-3253</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research Tomsk State University</orgName>
              <surname>Dirko</surname>
              <initials>Vladimir</initials>
              <address>Tomsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-4029-8353</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research Tomsk State University</orgName>
              <surname>Lozovoy</surname>
              <initials>Kirill</initials>
              <address>Tomsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0000-9839-894X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Maier</surname>
              <initials>Xeniya</initials>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>National Research Tomsk State University</orgName>
              <surname>Kokhanenko  </surname>
              <initials>Andrey</initials>
              <email>kokh@mail.tsu.ru</email>
              <address>Tomsk, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Determination of the length of the 2×N superstructure during the synthesis of Ge on Si(001) at different temperatures</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The article is devoted to the study of the length of the 2×N superstructure during epitaxial growth of Ge on Si(001) at different synthesis temperatures in the range from 200 °C to 750 °C. The analysis took place during the growth process by reflection high-energy electron diffraction in the direction of [110]. The work makes it possible to evaluate the effectiveness of elastic stress relief due to 2×N at the initial stages of growth over a wide temperature range.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.217</doi>
          <udk>539.27</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>molecular beam epitaxy</keyword>
            <keyword>reflection high-energy electron diffraction</keyword>
            <keyword>relaxation of elastic stresses</keyword>
            <keyword>2×N superstructure</keyword>
            <keyword>heteroepitaxy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.17/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>96-100</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-3947-8648</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Solomonov</surname>
              <initials>Nikita</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Lebedev</surname>
              <initials>Dmitry</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-8726-5615</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Pavlov</surname>
              <initials>Dmitrii </initials>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-5376-5555</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kuchmizhak </surname>
              <initials>Aleksandr</initials>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Golubok</surname>
              <initials>Alexander </initials>
              <email>aogolubok@mail.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0001-9792-045X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mukhin</surname>
              <initials>Ivan</initials>
              <email>muhin_is@spbstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">STM visualization of local density of optical states of gold nanoantennas with sub-diffraction resolution</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Simultaneous recording of luminescence induced by inelastic electron tunneling together with topography in scanning tunneling microscopy (STM-L) is a powerful tool in the study of local optical properties of nanostructures. In this study, we use the STM-L technique to visualize the local density of optical states (LDOS) by detecting the optical signal generated in the tunnel junction between a tungsten STM probe and a hollow hemispherical gold nanoantenna (d = 500 nm, h = 300 nm) fabricated by femtosecond laser printing. The light emission from the tunnel gap is caused by the process of inelastic tunneling of electrons. The intensity of photon signal directly dependent on LDOS – a key parameter in the design of light emitting inelastic tunneling-based nanoscale photon sources. We demonstrate that the STM-L method can provide information on the LDOS features of individual nanoantenna with sub-diffraction spatial resolution, as well as reveal smooth LDOS variations in periodic arrays of nanoantennas. These results highlight the unique capability of STM-L to reveal nanoscale optical patterns inaccessible to conventional diffraction-limited microscopy, highlighting its potential for advanced optical characterization at the nanoscale.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.218</doi>
          <udk>535</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>gold nanoantenna</keyword>
            <keyword>inelastic tunneling of electrons</keyword>
            <keyword>local density of optical states</keyword>
            <keyword>sub-diffraction imaging</keyword>
            <keyword>femtosecond laser printing</keyword>
            <keyword>scanning tunneling microscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.18/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>101-105</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Fattakhov </surname>
              <initials>Ilya </initials>
              <email>33ychenikan@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Trushin</surname>
              <initials>Oleg</initials>
              <email>otrushin@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Popov</surname>
              <initials>Aleksandr</initials>
              <email>aapopov@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Mazaletsky</surname>
              <initials>Leonid</initials>
              <email>boolvinkl@ya.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Titov</surname>
              <initials>Danil</initials>
              <email>titovdanil88@gmail.com</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Fedorov</surname>
              <initials>Andrey</initials>
              <email>fedorov_a_s@inbox.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Logunov</surname>
              <initials>Mikhail</initials>
              <email>logunov@cplire.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Optical properties of nanostructured nickel thin films obtained by oblique angle deposition</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The article presents a study of the optical properties of nickel nanospirals obtained by glancing angle deposition in order to identify and analyze circular dichroism (CD), a phenomenon in which a material exhibits different light absorption with left- and right- circular polarization. It has been experimentally established that the chiral geometry of nanospirals, formed due to the effect of shading and the speed of rotation of the substrate during deposition, is the cause of a pronounced optical response. The use of scanning electron microscopy (SEM) confirmed the formation of a series of spiral samples with varying pitch and diameter, which connects these morphological parameters with their spectral characteristics. Spectroscopic measurements in the visible range revealed circular dichroism. It is shown that the specific chiral geometry of nanostructures, formed due to sputtering conditions, leads to differential absorption of left- and right-circularly polarized light in the visible range. The results demonstrate the dependence of the optical response on the morphology of nanospirals, which opens up opportunities for designing metamaterials with specified parameters. The discovered circular dichroism makes such structures promising for use in nanophotonics, the creation of polarization filters, etc. The application of a magnetic field has little effect on the optical properties of the studied samples.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.219</doi>
          <udk>538.975</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>chiral metasurfaces</keyword>
            <keyword>circular dichroism</keyword>
            <keyword>nanospirals</keyword>
            <keyword>oblique angle deposition</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.19/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>106-109</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch</orgName>
              <surname>Grushevsky </surname>
              <initials>Egor </initials>
              <email>yaregor@mail.ru</email>
              <address>Yaroslavl, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch</orgName>
              <surname>Savinsky</surname>
              <initials>Nikolay</initials>
              <email>savinski1@yandex.ru</email>
              <address>Yaroslavl, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Trushin</surname>
              <initials>Oleg</initials>
              <email>otrushin@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Naumov</surname>
              <initials>Viktor</initials>
              <email>vvnau@ramber.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Shendrikova</surname>
              <initials>Lidiia</initials>
              <email>shendrikova.lida@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Magnetic properties of iron nanowires in a porous aluminum oxide matrix</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper is devoted to the study of magnetic properties of iron nanowire arrays synthesized using a porous Al2O3 template. Samples of porous aluminum oxide were obtained by double electrochemical anodization of the prepared foil in 0.5 M oxalic acid at a voltage of 60 V and a temperature of 25 °C and studied by scanning electron microscopy. The pore diameter is about 85 nm. Nanowires were electrodeposited in a three-electrode setup in the prepared matrices in a pulsed mode. The surfaces of porous membranes and the geometry of nanowires were studied using a scanning electron microscope. The magnetic properties of nanowire arrays were studied using a vibration magnetometer and micromagnetic modeling.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.220</doi>
          <udk>539.232; 542.06; 546–1; 537.6</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>anodizing</keyword>
            <keyword>aluminum oxide matrices</keyword>
            <keyword>nanowires</keyword>
            <keyword>electrochemical deposition</keyword>
            <keyword>vibrating magnetometry</keyword>
            <keyword>micromagnetic modeling</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.20/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>110-114</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Klimov</surname>
              <initials>Aleksandr</initials>
              <email>a.klimov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kunkov</surname>
              <initials>Roman</initials>
              <email>romunkov@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Lukhmyrina </surname>
              <initials>Tatiana </initials>
              <email>h7k9g00@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Matveev</surname>
              <initials>Boris</initials>
              <email>bmat@iropt3.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">HOT surface illuminated phoodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Photodetectors operating in the mid-infrared (IR) wavelength range (3 – 4 µ m) are widely used in gas analysis instruments and low-temperature pyrometry, such as methane and natural gas sensors, alcohol detectors, fire safety sensors, and fast-response pyrometers. This study investigates the causes of the decrease in current sensitivity with rising temperature in surfaceilluminated photodiodes (PDs) based on n-InAsSbP/InAs/p-InAsSbP double heterostructures (DHS), sensitive in the spectral range of λ = 2 – 4 µm at temperatures of 200–500 K. Proposed design improvements for the PD chip resulted in a weaker temperature dependence of the parameters, enabling reliable operation at 500 K with a current sensitivity of Si = 0.1 A/W.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.221</doi>
          <udk>681.782.473</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>InAsSb solid solution</keyword>
            <keyword>InAs heterostructures</keyword>
            <keyword>MWIR photodiode</keyword>
            <keyword>HOT PD</keyword>
            <keyword>PD mid infrared</keyword>
            <keyword>FSI infrared photodiodes</keyword>
            <keyword>surface illuminated PDs</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.21/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>115-118</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Balakirev</surname>
              <initials>Sergey</initials>
              <email>sbalakirev@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Chernenko </surname>
              <initials>Natalia</initials>
              <email>nchernenko@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Shandyba </surname>
              <initials>Nikita </initials>
              <email>shandyba.nikita@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Kirichenko </surname>
              <initials>Danil </initials>
              <email>dankir@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0002-6762-2053</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Southern Federal University</orgName>
              <surname>Dukhan </surname>
              <initials>Denis </initials>
              <email>duhan@sfedu.ru </email>
              <address>Taganrog, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Eremenko</surname>
              <initials>Mikhail</initials>
              <email>eryomenko@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Solodovnik</surname>
              <initials>Maxim</initials>
              <email>solodovnikms@sfedu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We study the processes of site-controlled growth of InAs quantum dots (QDs) on GaAs(111)B surfaces patterned by focused ion beams (FIB). The QDs tend to occupy vertexes of the pyramidal holes formed after annealing of the FIB-treated surfaces. The average degree of localization of QDs is found to strongly depend on the number of FIB passes and has a maximum value of 0.84, 0.7 and 0.92 for arrays with a distance of 2, 1 and 0.5 μm between holes, respectively. The average size and surface density of QDs also depends on the number of FIB passes, mainly with a non-monotonic nature. Photoluminescence emission of InAs QDs grown on the GaAs(111)B surface is observed in the spectral range of 950–1150 nm at a measurement temperature of 77 K.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.222</doi>
          <udk>621.315.592</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>GaAs(111)B</keyword>
            <keyword>focused ion beams</keyword>
            <keyword>molecular beam epitaxy</keyword>
            <keyword>quantum dots</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.22/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>119-124</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0001-4255-1383</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Penza State University</orgName>
              <surname>Maksov</surname>
              <initials>Andrey</initials>
              <address>Penza, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Penza State University</orgName>
              <surname>Golubkov</surname>
              <initials>Pavel</initials>
              <email>golpavpnz@yandex.ru</email>
              <address>Penza, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Pecherskaya</surname>
              <initials>Ekaterina</initials>
              <email>pea1@list.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0001-5075-2727</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Penza State University</orgName>
              <surname>Shepeleva</surname>
              <initials>Juliya</initials>
              <address>Penza, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Shepeleva</surname>
              <initials>Anastasia</initials>
              <email>eduard.shepelev.67@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Metrological aspect of oxide coatings growth on products with an aluminum substrate</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The article presents the study results of the influence of process mode parameters on the thickness of the oxide coating of aluminum-based products. Ceramic-like coatings were formed by the microarc oxidation method on AD31 alloy using a capacitor process installation with a sinusoidal current at a constant current density of 15 A/dm2 in the anodic-cathode mode. The study of oxide film growth was performed using a B7-517 thickness gauge. It is shown that for approximating the dependence of the oxide film thickness on the processing time of products, it is advisable to use piecewise approximation by mathematical functions of different types: exponential and linear. The use of such an approach is due to the influence of diffusion and chemical processes that dominate at the stages of spark and microarc discharges of the microarc oxidation process. However, this approach is not applicable for the purpose of analyzing the dependence of the film thickness on the concentration of sodium hydroxide and the ratio of the anodic and cathodic current components. In this case, the approximation is made by a quadratic function, due to the influence of nonlinear factors-impacts of the technological process. The results of the metrological analysis confirmed that the error in the adequacy of these models does not exceed 5%. It is advisable to use the obtained results when producing coatings with the required functional characteristics by the microarc oxidation method.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.223</doi>
          <udk>621.357.77; 620.22; 621.9.04</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>microarc oxidation</keyword>
            <keyword>digital twin</keyword>
            <keyword>thickness</keyword>
            <keyword>processing time</keyword>
            <keyword>concentration</keyword>
            <keyword>ratio of current components</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.23/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>125-128</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-1945-1050</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Bonch-Bruevich Saint Petersburg State University of Telecommunications</orgName>
              <surname>Andreeva</surname>
              <initials>Elena</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-8541-9916</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Andreev</surname>
              <initials>Dmitry</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Method for optimizing fiber optic interferometer for quantum systems</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A method for optimizing the parameters of a two-arm fiber-optic interferometer is proposed. To increase the OSNR at the interferometer output, a step-by-step method for aligning the lengths of the interferometer arms using a time delay meter is proposed. A high (83%) contrast of the interference pattern is achieved, which increases the sensitivity of the system and allows recording optical signals in a large dynamic range.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.224</doi>
          <udk>535.015</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>fiber-optic communication system</keyword>
            <keyword>interferometer</keyword>
            <keyword>optical fiber</keyword>
            <keyword>laser</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.24/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>129-133</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0000-7663-1149</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Ivashentseva </surname>
              <initials>Irina </initials>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Kaurova</surname>
              <initials>Natalia</initials>
              <email>kaurova@scontel.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Voronov</surname>
              <initials>Boris</initials>
              <email>bmvoronov@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0002-8334-8752</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Tretyakov</surname>
              <initials>Ivan</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of low temperature reactive magnetron sputtering NbN films for fabrication of an ultra-high sensitive detector</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper focuses on the study of reactive magnetron sputtering thin NbN films for sensitization of hot electron bolometers. HEB will be utilized in the Millimetron space observatory. The main principle of operation is a superconductivity that is experimentally observed when NbN film is cooled to the temperature of a liquid helium. At a critical temperature of superconductive transition a resistance of the film falls to zero and film becomes sensitive to light radiation of infrared and millimeter wavelength range. It is important to note that a thickness of film greatly affects on the sensitivity of film. When the thickness of film is decreased, the heat capacity decreases and with it the sensitivity of detectors based on superconductive film increases. In this research dependencies of the critical temperature from various parameters of fabrication technology were identified. Subsequently, parameters of reactive magnetron sputtering with the highest critical temperature at the lowest thickness of film were discovered.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.225</doi>
          <udk>535.231.62</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>NbN films</keyword>
            <keyword>critical temperature</keyword>
            <keyword>superconductive transition</keyword>
            <keyword>HEB</keyword>
            <keyword>reactive magnetron sputtering</keyword>
            <keyword>thin films</keyword>
            <keyword>superconductivity</keyword>
            <keyword>atomic force microscope</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.25/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>134-137</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Burtsev </surname>
              <initials>Vladimir</initials>
              <email>burtsev.vd@phystech.edu</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Vosheva</surname>
              <initials>Tatyana</initials>
              <email>Vosheva.ts@mipt.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Filonov</surname>
              <initials>Dmitry</initials>
              <email>dimfilonov@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">On the reconstruction of multiplet antennas from basic resonators</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this paper, we consider the possibility of reconstructing the geometry of an unknown multiplet antenna from the geometries of elementary radiators by combining their spatial far-field spectra when decomposed into spherical harmonics. We propose a simple step-by-step algorithm that allows us to combine a set of basic resonators for implementing a non-trivial radiation pattern.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.226</doi>
          <udk>537.862</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>antenna</keyword>
            <keyword>telecommunications</keyword>
            <keyword>multipolar decomposition</keyword>
            <keyword>radiation pattern</keyword>
            <keyword>beam forming</keyword>
            <keyword>computational electrodynamics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.26/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>138-142</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0000-6484-2969</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Petrov </surname>
              <initials>Pavel </initials>
              <email>mrfreej@outlook.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Kolybelnikov </surname>
              <initials>Nikolai </initials>
              <email>ya.nikolai-kolyb@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Davydov</surname>
              <initials>Vadim</initials>
              <email>davydov_vadim66@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Remote transport infrastructure monitoring system based on fiber-optic sensors</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We present a low-power autonomous system for remote structural health monitoring of bridges and similar assets in rural/hard-to-reach areas. The method uses distributed macrobending sections of standard fiber; load-induced loss is measured by optical time-domain reflectometry. The architecture minimizes components and transmits only incremental data via low-power radio or short satellite links, reducing cost and energy use. Laboratory tests detected 0.4 mm displacement; base spatial resolution was ≈1.5 m (0.5 m by interpolation) and dynamic range reached 67 dB. Field trials on a rural reinforced-concrete bridge confirmed autonomous logging of load-induced attenuation. Active-mode power ≤ 2 W enables long-term operation and cost-effective scaling to many sensing points.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.227</doi>
          <udk>681.7.068:681.2.08:624.21</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>fiber-optic sensors</keyword>
            <keyword>monitoring</keyword>
            <keyword>transport infrastructure</keyword>
            <keyword>LPWAN</keyword>
            <keyword>autonomous system</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.27/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>143-148</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0007-2270-4665</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Klimenko </surname>
              <initials>Roman</initials>
              <email>79213866205@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0009-8013-7130</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Danilova</surname>
              <initials>Valeria</initials>
              <email>danilova.vi@bk.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0006-2892-2279</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Klimenko</surname>
              <initials>Vasiliy</initials>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Davydov</surname>
              <initials>Vadim</initials>
              <email>davydov_vadim66@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Features of goniometric measurements in liquid media using triangular cuvettes</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A new method for measuring the refractive index of liquid media using a triangular cuvette has been developed. The features of goniometric measurements of the refractive index of liquid media using a triangular cuvette with a right angle have been determined. A cuvette design has been developed for conducting long-term studies of refractive index changes over occupied volume, which is particularly relevant for hydrocarbon mixtures. The advantages of the developed method for measuring the refractive index over industrial refractometers are highlighted. The main ones are the ability to easily measure liquid media of varying transparency and to conduct long-term measurements of volatile media. The results of studies of various media are presented and compared with measurements on industrial refractometers.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.228</doi>
          <udk>535.319</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>goniometric systems</keyword>
            <keyword>triangular cuvette</keyword>
            <keyword>features</keyword>
            <keyword>laser radiation</keyword>
            <keyword>measurement accuracy</keyword>
            <keyword>liquid medium</keyword>
            <keyword>refractive index</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.28/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>149-154</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-7746-3009</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Rybalka</surname>
              <initials>Sergey</initials>
              <email>sbrybalka@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0009-7772-3411</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Sitnikov </surname>
              <initials>Yury </initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-7294-7549</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kulchenkov</surname>
              <initials>Evgeny</initials>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-8639-3575</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Demidov</surname>
              <initials>Andrey</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Radiation hardness of n–p–n type bipolar transistor for voltage regulators</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The characteristics (collector current, base current, common-emitter current gain) of n–p–n type bipolar transistor for voltage regulator depending on total ionizing dose radiation using projected X-ray research complex were established. The functional dependencies and model of common-emitter current gain depending on total ionizing dose have been obtained.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.229</doi>
          <udk>621.382.2/.3; 537.312.54</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>n–p–n type bipolar transistor</keyword>
            <keyword>ionizing dose effects</keyword>
            <keyword>X-ray irradiation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.29/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>155-158</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0002-0656-8433</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Lazdin </surname>
              <initials>Ilya </initials>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Kondrateva</surname>
              <initials>Anastasia </initials>
              <email>kondrateva_n@spbau.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Komarevtcev</surname>
              <initials>Ivan</initials>
              <email>vanec@aport.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Enns </surname>
              <initials>Yakov </initials>
              <email>ennsjb@gmail.com</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Kazakin</surname>
              <initials>Aleksey</initials>
              <email>keha@newmail.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <researcherid>P-6861-2015</researcherid>
              <scopusid>10041592700</scopusid>
              <orcid>https://orcid.org/0000-0003-2511-0188</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Karaseov</surname>
              <initials>Platon</initials>
              <email>platon.karaseov@spbstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Long-term temperature resistance stability of gold-based multilayer electrodes for gas sensors</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The long-term stability of resistive gas sensor microheaters was investigated. The microheaters were created as multilayered metallizations on a silicon oxide membrane. The behavior of Cr/Au/Cr and Cr/Ni/Au stacks was studied. The resistance of the Cr/Ni/Au stack stabilized after 15 hours of exposure due to gold burning into the chromium-nickel sublayer. Resistance drift is less than 7% after 48 hours of continuous operation at 350°C and 12% at 500°C. However, Cr/Au/Cr metallization cannot be used in high-temperature sensors because it degrades significantly at temperatures as low as 300°C. Stack capping with SiO2 layer has low influence on initial forming stage and improves long-term stability.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.230</doi>
          <udk>539.8:538.975</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>multilayer electrode</keyword>
            <keyword>MEMS gas sensor</keyword>
            <keyword>annealing</keyword>
            <keyword>solid-state dewetting</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.30/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>159-163</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Tikhomirov </surname>
              <initials>Vladimir</initials>
              <email>greenbob54@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Chizhikov </surname>
              <initials>Sergey </initials>
              <email>chigikov95@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Gudkov</surname>
              <initials>Alexander</initials>
              <email>profgudkov@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Sidorov</surname>
              <initials>Igor</initials>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Sinev</surname>
              <initials>Ivan </initials>
              <email>i.sinev@metalab.ifmo.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Kushnerev</surname>
              <initials>Alexander</initials>
              <email>vv11111@yandex.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of increasing the energy efficiency of monolithic integrated circuits of the radiometer receiving path using computer modeling methods</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The high current consumption of the amplifying cascades in the miniature case of the radiometric receiver with these microcircuits existing today leads to a significant increase in temperature inside the case and subsequent heating with distortion of the picture of the real field of internal temperatures and soil humidity. The existing problem can be solved by creating new active elements from specialized monolithic microwave chips - low-noise transistors, for which the requirements of high energy efficiency will be taken into account when designing heterostructures. The article presents the results of numerical simulation of a low-noise transistor with low power consumption for use in monolithic integrated circuits of an energy-efficient low-noise amplifier of a miniature radiometer.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.231</doi>
          <udk>621.382</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>radiometric receiver</keyword>
            <keyword>MMIC</keyword>
            <keyword>HEMT</keyword>
            <keyword>heterostructure</keyword>
            <keyword>energy efficiency</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.31/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>164-167</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0009-4548-3724</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Agafonov </surname>
              <initials>Dmitriy </initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-9602-7221</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Research Institute of Electronic and Mechanical Devices</orgName>
              <surname>Gurin</surname>
              <initials>Sergey</initials>
              <address>Penza, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-9319-2475</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Research Institute of Electronic and Mechanical Devices</orgName>
              <surname>Novichkov </surname>
              <initials>Maksim </initials>
              <address>Penza, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0006-3140-5897</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Research Institute of Electronic and Mechanical Devices</orgName>
              <surname>Ryzhov</surname>
              <initials>Alexandr</initials>
              <address>Penza, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0009-0009-7458-5324</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Volkov</surname>
              <initials>Vadim</initials>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Shepeleva</surname>
              <initials>Anastasia</initials>
              <email>eduard.shepelev.67@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Research and development of a deposition synthesis technology for piezoelectric BaTiO3 thin films for use in sensors for dynamic and static pressures</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The prospects for creating heterostructures based on ferroelectric materials have been studied. The most suitable technological parameters for forming these structures have been identified. A detailed analysis of the crystalline structure of the obtained ferroelectric films has been carried out. It has been established that at the moment of deposition, when creating thin-film multilayer systems with a temperature of the sensitive element (SE) above 700 °С, the perovskite layer loses its ferroelectric characteristics.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.232</doi>
          <udk>537.226</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>sensing element</keyword>
            <keyword>piezoelectric thin films</keyword>
            <keyword>magnetron sputtering</keyword>
            <keyword>stoichiometric composition</keyword>
            <keyword>pressure sensor</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.32/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>168-171</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Belozerov </surname>
              <initials>Igor </initials>
              <email>igas2580@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Uvarov </surname>
              <initials>Ilia </initials>
              <email>i.v.uvarov@bk.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">A compact MEMS switch based on a cantilever with three elastic elements</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">MEMS switches are of significant interest for advanced radioelectronic systems. High RF performance combined with small size and low power consumption make them promising for use in phased array antennas, wireless communication devices and navigation systems. This paper presents a resistive switch based on a cantilever with three elastic elements. The pull-in voltage and contact resistance are measured, and the results are compared with the calculated values. The switch provides lower resistance than previous devices.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.233</doi>
          <udk>621.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>MEMS switch</keyword>
            <keyword>cantilever</keyword>
            <keyword>pull-in voltage</keyword>
            <keyword>contact resistance</keyword>
            <keyword>contact force</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.33/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>172-177</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-4894-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Barantsev </surname>
              <initials>Oleg </initials>
              <email>ovbarantsev@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Vasilkova </surname>
              <initials>Elena </initials>
              <email>elenvasilkov@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Pirogov</surname>
              <initials>Evgeny</initials>
              <email>zzzavr@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0001-6162-2071</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Dementev</surname>
              <initials>Peter</initials>
              <email>demenp@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Nevedomskiy</surname>
              <initials>Vladimir</initials>
              <email>nevedom@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Karachinsky</surname>
              <initials>Leonid</initials>
              <email>lkarachinsky@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Novikov</surname>
              <initials>Innokenty</initials>
              <email>innokenty.novikov@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <authorCodes>
              <orcid>0000-0001-8629-2064</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Sobolev</surname>
              <initials>Maxim</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In0.83Ga0.17As/InP PIN-photodiode heterostructures with different metamorphic buffer layers’ profiles have been grown by molecular beam epitaxy. Cross-section transmission electron microscopy images have been investigated to estimate the density of threading dislocations. Heterostructures’ surface and its roughness have been researched by atomic force microscopy. The lowest dislocation density and surface roughness were observed in the heterostructure with a linear-graded metamorphic buffer layers (MBLs). MBLs were designed with a In mole fraction gradient of 0.18 rel. units/μm. Epitaxial growth was concluded with a final in situ high-temperature annealing step. Potential distribution of the heterostructures’ cleaved surface has been researched by Kelvin probe force microscopy.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.234</doi>
          <udk>621.383.525</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>metamorphic buffer layers</keyword>
            <keyword>infrared photodetectors</keyword>
            <keyword>molecular beam epitaxy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.34/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>178-182</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kunkov</surname>
              <initials>Roman</initials>
              <email>romunkov@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Karandashev</surname>
              <initials>Sergey</initials>
              <email>ksa08@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Klimov</surname>
              <initials>Aleksandr</initials>
              <email>a.klimov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Lukhmyrina </surname>
              <initials>Tatiana </initials>
              <email>h7k9g00@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Remennyi</surname>
              <initials>Maxim</initials>
              <email>Mremennyy@mail.ioffe.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">InAsSb solid solution optocouple for carbon dioxide analysis</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper reports the results of work aimed at improving the performance of LEDs and photodiodes based on InAsSb solid solutions operating in the spectral range around 4.2 μm, as well as improving the efficiency of optocouple based on them in the absorption band of carbon dioxide in a wide temperature range, including high temperatures. An increase in the characteristics of optoelectronic components was achieved: detectivity D* = 3∙1010 (cm∙√Hz)/W and LEDs’ power ~ 100 µ W (200 mA) at room temperature. Based on the obtained optoelectronic components, a non-dispersive infrared carbon dioxide sensor with a limit of detection of 0.0025 vol.%, relative error of 0.1% of measurement in the 0–10 vol.% concentration was developed. The sensor featured a 2 cm optical path, a sampling interval of 128 ms, and a power consumption of less than 50 mW.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.235</doi>
          <udk>681.782.473</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>InAsSb heterostructures</keyword>
            <keyword>mid-wave IR LEDs</keyword>
            <keyword>mid-wave IR photodiodes</keyword>
            <keyword>nondispersive infrared gas sensor</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.35/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>183-186</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0001-6067-8214</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Sedelnikov </surname>
              <initials>Sergei </initials>
              <email>SedelnikovSA@mpei.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Electron scattering in matter taking into account surface effects</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper presents a model of inelastic electron scattering in a substance, taking into account surface effects. The surface effects were taken into account when calculating the differential cross sections of inelastic scattering based on the dielectric theory of Drude. In this paper, the transmission function was calculated when solving the transfer equation using two methods: the matrix method and the Monte Carlo method. Based on the transmission functions obtained, the energy spectra of X-ray photoelectron spectroscopy (XPS) were calculated. Computational and simulation models of inelastic electron scattering in matter have been proposed to implement methods for solving the transport equation.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.236</doi>
          <udk>543.42</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>electron spectroscopy</keyword>
            <keyword>inelastic scattering</keyword>
            <keyword>surface effects</keyword>
            <keyword>transmission function</keyword>
            <keyword>Monte Carlo method</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.36/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>187-190</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Belikov</surname>
              <initials>Ivan</initials>
              <email>ibelikov@hse.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0005-6258-9353</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Rozhkova</surname>
              <initials>Polina</initials>
              <email>pv_rozhkova2@student.mpgu.edu</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Prikhodko </surname>
              <initials>Anatoliy </initials>
              <email>anatprikh1995@yandex.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Shurakov</surname>
              <initials>Alexander</initials>
              <email>alexander@rplab.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Photonic-electronic IC of a subterahertz GaAs-on-Si in-phase/quadrature mixer</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, we propose a photonic-electronic integrated circuit of a 140 GHz in-phase/quadrature (I/Q) mixer based on the GaAs-on-Si platform which is in demand of next-generation wireless networks. The mixer conversion loss is ultimately limited by the onchip power distribution network, exhibiting 7–8 dB insertion losses for the local oscillator and carrier signals with reflection losses as low as 28 dB. The circuit potentially ensures baud rates of up to 30 GHz which can be tuned. Although, the proposed integrated circuit is designed for operation at 140–150 GHz, it can be easily scaled-down for carrier frequencies of 280–300 GHz or even significantly higher. We believe that our findings should be of interest to developers of 6G wireless modules and systems.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.237</doi>
          <udk>621.382.2</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>subterahertz</keyword>
            <keyword>Si integrated photonics</keyword>
            <keyword>GaAs diode</keyword>
            <keyword>I/Q mixer</keyword>
            <keyword>6G communication</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.37/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>191-195</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0002-2294-3731</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Barbyshev</surname>
              <initials>Konstantin</initials>
              <email>k.barbyshev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-1511-1128</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Khmelev</surname>
              <initials>Aleksandr</initials>
              <email>a.khmelev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0000-8253-7263</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Sevryukov</surname>
              <initials>Dmitriy</initials>
              <email>d.sevryukov@goqrate.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Duplinsky</surname>
              <initials>Alexey</initials>
              <email>a.duplinsky@goqrate.com</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0009-0006-5851-6175</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Bakhshaliev</surname>
              <initials>Ruslan</initials>
              <email>r.bakhshaliev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0002-1599-9801</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kurochkin</surname>
              <initials>Vladimir</initials>
              <email>v.kurochkin@rqc.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Uplink satellite optical communication based on acousto-optic modulator</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">High-speed data transfer is becoming increasingly necessary for modern satellite communication systems. To address growing bandwidth demands, optical technologies are proposed. Here we investigate an approach to designing an uplink optical communication system based on the acousto-optic modulation scheme. The preliminary findings suggest the applicability of this strategy to provide reliable communications with data rates up to 2.4 Mbps and a bit error rate of 10–9.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.238</doi>
          <udk>621.391.63</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>satellite optical communications</keyword>
            <keyword>acousto-optic modulator</keyword>
            <keyword>Manchester encoding</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.38/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>196-199</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Sinitskaya</surname>
              <initials>Olesya</initials>
              <email>olesia-sova@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-1835-1629</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Shubina</surname>
              <initials>Kseniia</initials>
              <email>rein.raus.2010@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Mizerov</surname>
              <initials>Andrey</initials>
              <email>andreymizerov@rambler.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Nikitina</surname>
              <initials>Ekaterina </initials>
              <email>mail.nikitina@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">High-sensitivity and low-noise GaN-based ultraviolet photodetectors</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This study presents the fabrication of ultraviolet metal-semiconductor-metal photodetectors based on ultrathin epitaxial layers GaN grown on sapphire substrates. The devices were characterized through current-voltage measurements and sensitivity and noise characteristics calculations. At a bias voltage of 1 V, the PDs demonstrated a responsivity of 156 mA·W–1 and a noise-equivalent power of 0.4·10–22 W·Hz–0.5, which highlight their highsensitivity and low-noise performance.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.239</doi>
          <udk>621.383.524</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ultraviolet photodetector</keyword>
            <keyword>GaN</keyword>
            <keyword>metal-semiconductor-metal</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.39/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>200-204</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0009-9103-724X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Fedosov </surname>
              <initials>Igor </initials>
              <email>isfedosov@hse.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Fominykh</surname>
              <initials>Nikita A.</initials>
              <email>nfominykh@hse.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Kryzhanovskaya Natalia V.</surname>
              <initials>Natalia</initials>
              <email>nkryzhanovskaya@hse.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>National Research University ‘Higher School of Economics”</orgName>
              <surname>Makhov</surname>
              <initials>Ivan</initials>
              <email>imahov@hse.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0003-3686-935X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research University “Higher School of Economics” (St. Petersburg branch)</orgName>
              <surname>Moiseev</surname>
              <initials>Eduard</initials>
              <email>emoiseev@hse.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Ivanov</surname>
              <initials>Konstantin </initials>
              <email>kivanov@hse.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <scopusid>35379962200</scopusid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Physical Technical Institute of the Russian Academy of Sciences</orgName>
              <surname>Zhukov</surname>
              <initials>Alexey</initials>
              <email>zhukov@beam.ioffe.ru</email>
              <address>Russia, 194021, St.Petersburg, Polytechnicheskaya 26</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Spectral composition of radiation from microlaser coupled to waveguide</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We investigate the mode composition of a microdisk laser coupled with an optical waveguide. The output spectra of emission and light-current characteristic of the microlaser obtained from the output edge of the waveguide are studied. The microlaser demonstrates single-mode emission in consecutive ranges of injection currents, that are alternated with pronounced mode hoping. The intensity of the modes changes non-monotonically with the growth of the pump current. Such a behavior, which we attribute to the laser self-heating, results in numerous kinks in the light-current curve. The kink-free current range in which single-mode lasing is maintained reaches 25 mA.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.240</doi>
          <udk>538.958</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>whispering gallery mode</keyword>
            <keyword>microdisk laser</keyword>
            <keyword>mode switching</keyword>
            <keyword>single mode lasing</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.40/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>205-209</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Merzlinkin </surname>
              <initials>Vitalii </initials>
              <email>merzlinkin@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-1511-1128</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Khmelev</surname>
              <initials>Aleksandr</initials>
              <email>a.khmelev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0000-8253-7263</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Sevryukov</surname>
              <initials>Dmitriy</initials>
              <email>d.sevryukov@goqrate.com</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0006-5851-6175</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Bakhshaliev</surname>
              <initials>Ruslan</initials>
              <email>r.bakhshaliev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0009-0006-4080-0442</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Levashov</surname>
              <initials>Sergey </initials>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0002-1599-9801</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kurochkin</surname>
              <initials>Vladimir</initials>
              <email>v.kurochkin@rqc.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Modeling weather-resilient laser communication: PPM performance with SNSPD in satellite links</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Laser communication using satellites represents a promising avenue for data transmission in geographically distant areas without advanced infrastructure. This approach is characterized by its high transmission rate and low power requirements, providing substantial benefits over optical fiber and radio communication. However, the optical channel should exhibit greater transparency for light transmission, resulting in a severely restricted application of this technique for information transmission during adverse weather conditions or over long distances. To mitigate the limitations, the employment of a superconducting single-photon detector as a receiver has been proposed. Here, we provide a numerical analysis of a laser communication system to determine the atmospheric attenuation thresholds required to establish a reliable laser link using the pulse position modulation (PPM) scheme and superconducting nanowire single-photon detectors (SNSPD).</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.241</doi>
          <udk>621.391.63</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>laser communication</keyword>
            <keyword>satellite</keyword>
            <keyword>SNSPD</keyword>
            <keyword>PPM</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.41/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>210-213</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-1945-1050</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Bonch-Bruevich Saint Petersburg State University of Telecommunications</orgName>
              <surname>Andreeva</surname>
              <initials>Elena</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0001-1437-8501</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Saltykov</surname>
              <initials>Nikita</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Influence of the nonlinear effects on the high bit rate fiberoptics communication system</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Fiber-optic telecommunication systems provide high information capacity, defined as the product of bit rate and transmission distance. To achieve high information capacity, it is necessary to take into account all the effects that affect symbol pulses in optical fiber. Experimental investigation has shown that control of the symbol pulse spectrum allows us to identify the effects of their self-action and achieve maximum information capacity of the telecommunication system.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.242</doi>
          <udk>535.015</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>fiber-optic communication system</keyword>
            <keyword>optical fiber</keyword>
            <keyword>dispersion-shifted fiber</keyword>
            <keyword>nonlinear effects</keyword>
            <keyword>Phase Self Modulation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.42/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>214-217</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-1945-1050</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Bonch-Bruevich Saint Petersburg State University of Telecommunications</orgName>
              <surname>Andreeva</surname>
              <initials>Elena</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0006-7950-7104</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kassihin</surname>
              <initials>Vladimir</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Experimental study of the FWM-effect in the fiber-optic system with wavelength division multiplexing</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Four-wave mixing (FWM) is the intermodulation phenomenon in the optical signal, as a result of which several linearly polarized optical waves interact. An experimental study of the Four-Wave Mixing effect in standard single-mode fiber (SSMF) and nonzero dispersion-shifted fiber (NZDSF) was carried out, with two and three wavelengths. An experimental investigation was carried out with the typical DWDM equipment. It was shown that FWM-effect has the significant influence on the propagation of the symbol pulses in dispersion - shifted optical fiber.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.243</doi>
          <udk>535.015</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>fiber-optic communication system</keyword>
            <keyword>Wavelength Division Multiplexing</keyword>
            <keyword>optical fiber</keyword>
            <keyword>dispersion-shifted fiber</keyword>
            <keyword>nonlinear effects</keyword>
            <keyword>Four-Photon Mixing</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.43/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>218-222</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Frolov </surname>
              <initials>Ilya </initials>
              <email>ilya-frolov88@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-3771-3541</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Pacific National University</orgName>
              <surname>Zaytsev</surname>
              <initials>Sergey</initials>
              <email>zaytsevsa@togudv.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0003-4854-2813</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Sergeev</surname>
              <initials>Viacheslav</initials>
              <email>sva@ulstu.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Radaev</surname>
              <initials>Oleg </initials>
              <email>oleg.radaev.91@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Relationship between the luminous flux drop of LED matrices during tests with thermal resistance and parameters of the emission spectrum</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Accelerated tests of LED matrices under the action of electric current under conditions of thermal cycling and vibration were carried out. It was determined that the value of the luminous flux decay correlates with the junction-to-case thermal resistance of the matrices and the value of the KS coefficient, which determines the ratio of the luminous flux of optical emission in the near infrared region of the spectrum from 760 nm to 900 nm to the luminous flux in the spectrum range from 470 nm to 760 nm. The correlation coefficient between the luminous flux decay and the junction-to-case thermal resistance is 0.7, and the correlation coefficient between the luminous flux decay and the KS coefficient is 0.48.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.244</doi>
          <udk>621.382.088</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>LED matrices</keyword>
            <keyword>accelerated testing</keyword>
            <keyword>luminous flux decay</keyword>
            <keyword>thermal resistance</keyword>
            <keyword>emission spectrum</keyword>
            <keyword>correlation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.44/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>223-228</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Parfenov</surname>
              <initials>Vadim</initials>
              <email>vadim_parfenov@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0003-1110-1579</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Elefteriadi </surname>
              <initials>Elina </initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Laser cleaning of plaster</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper is devoted to experimental study of laser cleaning of plaster. Nowadays laser technologies are widely used in the preservation of Cultural Heritage, and laser cleaning is most frequently used technique in artworks conservation. However, laser cleaning of plaster sculptures and architectural decorations is not yet established. Experimental results of divestment of model samples and 20th century plaster sculpture by means of pulsed Nd:YAG laser (generating at wavelengths of 1064 nm, 532 nm and 355 nm) and fiber laser with wavelength of 1064 nm are presented.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.245</doi>
          <udk>621.373.8:788.38:77.085 + 929.657</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Laser cleaning</keyword>
            <keyword>Cultural Heritage</keyword>
            <keyword>artworks</keyword>
            <keyword>restoration</keyword>
            <keyword>plaster</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.45/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>229-232</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0006-4080-0442</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Levashov</surname>
              <initials>Sergey </initials>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Merzlinkin </surname>
              <initials>Vitalii </initials>
              <email>merzlinkin@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0006-5851-6175</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Bakhshaliev</surname>
              <initials>Ruslan</initials>
              <email>r.bakhshaliev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Duplinsky</surname>
              <initials>Alexey</initials>
              <email>a.duplinsky@goqrate.com</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0003-1511-1128</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Khmelev</surname>
              <initials>Aleksandr</initials>
              <email>a.khmelev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0009-0002-2294-3731</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Barbyshev</surname>
              <initials>Konstantin</initials>
              <email>k.barbyshev@goqrate.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Background illumination in the guidance system for laser communication on the Impulse-1 satellite</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Satellite laser communication requires high-precision mutual pointing between the satellite and the ground station, which is achieved by detecting a beacon laser on a tracking camera and adjusting the optical axis. Here we research the detection procedure of the laser beacon by onboard satellite camera, focusing on the relationship between laser power, beam divergence, and background illumination influenced by seasonal and geographical factors. Considering a test image from the “Impulse-1” spacecraft, we demonstrate that a 3W laser with a 3 mrad beam divergence illumination can exceed background levels by up to 20 times, improving detection as the satellite rises above the horizon, especially when positioned directly overhead.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.246</doi>
          <udk>621.391.63</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>cubesat</keyword>
            <keyword>spacecraft guidance</keyword>
            <keyword>satellite optical communications</keyword>
            <keyword>laser beacon</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.46/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>233-236</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-1999-1433</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Makarov</surname>
              <initials>Dmitry</initials>
              <email>d.makarov@narfu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Makarova </surname>
              <initials>Ksenia </initials>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Kharlamova </surname>
              <initials>Anastasya </initials>
              <email>kharlamova.anastasya2015@yandex.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Hong–Ou–Mandel interference on free charged particles</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The Hong–Ou–Mandel effect (HOM) is used in many fields of quantum optics and quantum technologies. It is well known that this effect occurs when two identical photons in different modes hit a beam splitter (BS) with a reflection coefficient of R = 1/2. The classical effect consists in the interaction of two photons and was first experimentally demonstrated by Hong and co-authors in 1987. In this paper, it was shown that this effect can be realized using free charged particles. It was determined when this effect would manifest itself. The results obtained for HOM have an analytical form, which simplifies its analysis. The Hong–Ou–Mandel effect is of fundamental importance in quantum physics and quantum computer science, as it demonstrates quantum entanglement and interference. The results of the research can be used in problems of quantum physics and quantum computer science.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.247</doi>
          <udk>535.14</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>HOM effect</keyword>
            <keyword>free electrons</keyword>
            <keyword>photons</keyword>
            <keyword>quantum optics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.47/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>237-241</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0000-4473-432X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Bi </surname>
              <initials>Jiachen </initials>
              <email>bijiachen0921@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0008-2030-0517</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Pang</surname>
              <initials>Haihong</initials>
              <email>panghh0303@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Eidelman</surname>
              <initials>Boris</initials>
              <email>eidelman.bl@misis.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Thermal management of solar cells through down-conversion nanoparticles</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Silicon-based solar cells are currently the most widely used, accounting for 90.9% of the global photovoltaic module production. Solar radiation in the wavelength range of 400 to 1200 nm is effectively absorbed by crystalline silicon solar cells and converted into electrical energy, and the remaining energy is converted into thermal energy. The efficiency of silicon-based solar cells is very sensitive to temperature. For every 1 °C increase in the temperature of the photovoltaic panel, the efficiency will decrease by 0.5–0.65%. Down-conversion nanoparticles can convert ultraviolet rays into visible light that is easy for photovoltaic panels to absorb. This paper first established a thermodynamic model for coating titanium dioxide nanoparticles with a grain size of 20 nm on the surface of crystalline silicon solar panels and experimentally confirmed that this method can effectively reduce the operating temperature of silicon-based photovoltaic panels while ensuring electrical performance.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.248</doi>
          <udk>53.04</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>crystalline silicon solar cells</keyword>
            <keyword>down-conversion</keyword>
            <keyword>nanoparticles</keyword>
            <keyword>reduction of solar cell temperature</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.48/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>242-246</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-1556-7635</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Vodyashkin </surname>
              <initials>Andrey</initials>
              <email>av.andrey2013@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0005-0038-124X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Buryanskaya</surname>
              <initials>Evgenia</initials>
              <email>buryanskayael@bmstu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Ryzhenko</surname>
              <initials>Dmitriy</initials>
              <email>dsr@bmstu.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Makeev</surname>
              <initials>Mstislav</initials>
              <email>m.makeev@bmstu.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effect of inclusion of titanium dioxide microparticles on the properties of PVDF/TiO2</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the course of the study, a method for obtaining a composite PVDF film with titanium dioxide microparticles was proposed. The work studied the effect of adding different amounts of titanium dioxide microparticles on the surface morphology and roughness of the resulting material. The spectral characteristics of PVDF/TiO2 films were studied. The electrophysical characteristics of the films were analyzed depending on the concentration of added titanium dioxide microparticles.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.249</doi>
          <udk>544.774</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>microparticles</keyword>
            <keyword>TiO2</keyword>
            <keyword>PVDF</keyword>
            <keyword>composite materials</keyword>
            <keyword>atomic force microscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.49/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>247-252</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Sanatulina </surname>
              <initials>Arina</initials>
              <email>sanatulina.af@phystech.edu</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Novosyolov </surname>
              <initials>Artyom</initials>
              <email>sir.nowosiolov@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Vershinina</surname>
              <initials>Olesya</initials>
              <email>seraia.ov@phystech.edu</email>
              <address>Dolgoprudny, Moscow region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Lizunova</surname>
              <initials>Anna</initials>
              <email>anna.lizunova@gmail.com</email>
              <address>Dolgoprudny, Moscow region, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Investigation of metal-enhanced photoluminescence of zinc oxide films induced by platinum nanoparticles of different sizes</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This study examines the influence of platinum nanoparticles on plasmonenhanced photoluminescence in films prepared from semiconductor zinc oxide nanocrystals. Metal nanoparticles with different average sizes from 48 to 82 nm were synthesized by a gas discharge method with additional in-flow heat treatment at 985 °C and deposited by dry aerosol printing on quartz glass followed by ZnO film fabrication. The relationship between the size of nanoparticles processed in the tube furnace and the working gas flow rate as well as the correlation between the enhancement factor of ZnO ultraviolet photoluminescence and the size of the Pt nanoparticles were established. A relationship between the photoluminescence enhancement factor and layers’ configuration in nanostructures was also found. Theoretical calculations were also performed to determine the effects of plasmonic enhancement of ZnO photoluminescence.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.250</doi>
          <udk>539.216.2</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>platinum nanoparticles</keyword>
            <keyword>spark discharge</keyword>
            <keyword>tube furnace</keyword>
            <keyword>plasmonic nanostructures</keyword>
            <keyword>ultraviolet metal-enhanced photoluminescence</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.50/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>253-257</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Kadinskaya </surname>
              <initials>Svetlana </initials>
              <email>skadinskaya@bk.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-3469-5897</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Kondratev</surname>
              <initials>Valeriy</initials>
              <email>kvm_96@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0008-4344-4863</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Nikolaeva </surname>
              <initials>Aleksandra </initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Sharov</surname>
              <initials>Vladislav</initials>
              <email>vl_sharov@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0001-7223-7232</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Bolshakov</surname>
              <initials>Alexey</initials>
              <email>acr1235@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Memristive effect in hydrothermal ZnO structures</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this paper, we investigate the memristor properties of ZnO microstructures synthesized by hydrothermal method. ZnO is a promising material for obtaining energyefficient memory elements due to its compatibility with CMOS technologies, low cost, and good scalability. In this study, hexagonal ZnO microprisms with a diameter of ~10 μm and a thickness of ~2 μm were obtained. The study of the current-voltage characteristics revealed a unipolar memristor effect with switching between the high (HRS) and low (LRS) resistance states when applying both positive and negative voltage. The switching ratio ION/IOFF was 102 for forward bias and 104 for reverse bias. The obtained results demonstrate the potential of ZnO structures for application in non-volatile memory with low power consumption.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.251</doi>
          <udk>53.097</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>zinc oxide</keyword>
            <keyword>hydrothermal</keyword>
            <keyword>memristor</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.51/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>258-264</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Guseva</surname>
              <initials>Yulia</initials>
              <email>Guseva.Julia@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Davydova</surname>
              <initials>Daria</initials>
              <email>davydova.dv@spbstu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Yakusheva</surname>
              <initials>Maria</initials>
              <email>yakusheva.ma@edu.spbstu.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Davydov</surname>
              <initials>Vadim</initials>
              <email>davydov_vadim66@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Features of determining relationships in aqueous biological solutions between biophysical constants and environmental parameters using optical methods</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The relevance of early diagnostics of chronic kidney disease (CKD) is due to it high prevalence and asymptomatic course of the disease in the early stage. There is a need to develop new approaches to the diagnosis of early-stage kidney damage that are accessible, non-invasive and reliable, with an emphasis on the use of optical methods. A new method of rapid diagnosis based on refractometric measurement of the refractive index of urine has been proposed. New relationships between the refractive index, osmolality Os, and density ρ have been established. Based on the values of Os and ρ, doctors determine the presence of kidney disease or damage at an early stage (the patient is then referred for clinical examination). The proposed method provides high accuracy (the refractive index measurement error of ±0.00005 in a wide temperature range of 288–303 K made it possible to determine Os and ρ based on these measurements with an error of 2 mOsm/l and 0.00015 g/cm3, which is sufficient to determine kidney damage at an early stage. This makes it competitive when compared to traditional methods of rapid kidney function testing (urinalysis, test strips, and mobile density meters). The results obtained for the diagnosis of kidney function were clinically confirmed during the examination of patients. This confirms the possibility of using refractometry for rapid diagnosis of kidney condition to detect damage at an early stage.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.252</doi>
          <udk>53.03</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>kidney</keyword>
            <keyword>early-stage damage</keyword>
            <keyword>refractometry</keyword>
            <keyword>osmolarity</keyword>
            <keyword>density</keyword>
            <keyword>urine</keyword>
            <keyword>rapid diagnostics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.52/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>265-268</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Denisova </surname>
              <initials>Elena</initials>
              <email>Tiranderel@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Kordyukova</surname>
              <initials>Anna</initials>
              <email>annygm00@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Sevakov</surname>
              <initials>Daniil</initials>
              <email>sevakovdaniil@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Utilizing long short-term memory neural network for effective prediction of electrocardiosignals and pathology identification</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Currently, neural networks (NN) are becoming an increasingly common tool in the field of diagnosis of diseases of the cardiovascular system. These architectures demonstrate high accuracy in analyzing complex data such as electrocardiosignals (ECS). Among various NN types, long-term memory (LSTM) stands out as a powerful method for analyzing time series. This technology has the ability to remember long-term dependencies in data, which makes it particularly useful for processing sequential data, including ECS. However, using the standard electrocardiography (ECG) method, it is impossible to obtain complete information about the stages of development of cardiovascular pathologies. The current trend towards increasing the informative value of the ECS has led to the development of a new method of ultra-high resolution electrocardiography (UHR ECG). This method significantly improves the detection of pathologies in the cardiovascular system in various areas of ECG treatment and also allows the detection of early markers of acute myocardial ischemia. UHR ECG provides an opportunity for a more detailed analysis of cardiac signals, which can be crucial in the early diagnosis and treatment of cardiovascular diseases. In this work, a six-layer LSTM was used to predict the shape of ECS obtained using the UHR ECG method in experimental rats. The experiments were aimed at modeling acute myocardial ischemia in order to identify trends in the development of markers of this pathology. The results of the study may contribute to the creation of more effective methods for diagnosing and monitoring cardiovascular diseases.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.253</doi>
          <udk>004.622</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ultra-high resolution electrocardiography</keyword>
            <keyword>electrocardiosignal</keyword>
            <keyword>neural network</keyword>
            <keyword>prediction</keyword>
            <keyword>long short-term memory networks</keyword>
            <keyword>coronary heart disease</keyword>
            <keyword>ischemia</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.53/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>269-274</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-3859-6981</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Abelit</surname>
              <initials>Anna</initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0006-2524-7618</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Boitsova </surname>
              <initials>Natalia </initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-3756-0701</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Verlov</surname>
              <initials>Nikolai</initials>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-5470-9301</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Stupin</surname>
              <initials>Daniil</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Marker ink based dye as a tool for intravital high-resolution visualization of cells on a silicon</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">When creating new bioelectronic devices, including bioimpedance cytosensors, there is a need for optical monitoring of cell interactions with bioelectrodes. Typically, fluorescent dyes are used for this purpose, which are usually expensive and require strict storage conditions. In this paper, we propose a technology for visualizing living cells on opaque surfaces such as silicon using do-it-yourself low-cost dye called ABDS (A Beauty Dye for Staining), which is based on permanent marker red ink. We have shown that the use of ABDS allows one to obtain more detailed images of cells in respect to cost-free reflected light modes without using any dye at all. Moreover, the ABDS utilization makes it possible to study cells at the edge of the opaque bioelectronic device cell culturing chamber, which is difficult when using simple reflected light modes due to strong optical distorsions caused by the formation of a cells medium meniscus.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.254</doi>
          <udk>57.086.164</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>cell visualization</keyword>
            <keyword>HeLa</keyword>
            <keyword>ABDS</keyword>
            <keyword>silicon</keyword>
            <keyword>PETG</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.54/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>275-279</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Kharlamova </surname>
              <initials>Anastasya </initials>
              <email>kharlamova.anastasya2015@yandex.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Scattering of ultrashort laser pulses on some polymers and plasmids</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper shows a method for the theoretical calculation of the spectrum of interaction between an ultrashort laser pulse and complex polyatomic objects. The calculation is shown on some plasmids DNA. The special feature of the calculation is the speed of processing the results. The method allows you to consider the scattering on all the atoms included in the molecules, while the calculation is performed quickly enough, due to the use of symmetries in the structure of the object in question. The method is suitable only for molecules with repeating regions in their structure, such as some plasmids and polymers, including DNA molecules with repeating nitrogenous bases. The calculation is based on the Hartree–Fock–Slater method. Before mathematical modeling, the molecule is built in the Avogadro program. The coordinates of the constructed model are used for the calculation. To date, the processing of experimental data obtained during operation of ultrashort pulses is difficult. The proposed method can help in deciphering the experimental data and reduce the processing time of the results.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.255</doi>
          <udk>539.192</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ultrashort laser pulses</keyword>
            <keyword>plasmids DNA</keyword>
            <keyword>scattering spectra</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.55/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>280-283</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0001-5367-1604</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Liamina </surname>
              <initials>Julia </initials>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Mazing</surname>
              <initials>Maria</initials>
              <email>mazmari@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0004-2857-6172</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Glebov</surname>
              <initials>Stepan</initials>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Zaitceva</surname>
              <initials>Anna</initials>
              <email>anna@da-24.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Davydov</surname>
              <initials>Vadim</initials>
              <email>davydov_vadim66@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Development of an optical spectroscopy-based non-invasive vasodilation assessment method</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This study investigates feasibility of a novel spectrophotometric method for the assessment of endothelial dysfunction (ED) in substitution for standard ultrasound flow-mediated dilation test (FMD). Using an 18-channel optical analyzer (410–940 nm), tissue optical spectra during reactive hyperemia were assessed in 21 patients with ED-related condition (atherosclerosis, coronary heart disease, post-COVID syndrome) and 11 control subjects. Vascular occlusion test (VOT) was performed on the subjects with 3-minute ischemia of the brachial artery at 180 mmHg. Statistical analysis revealed significant differences (p &lt; 0.05) in absorption of light at specified wavelengths (410, 560, 585, 610, 680, 705, 760, 860 nm) between groups with most pronounced differences in atherosclerosis patients. Results show promise for ED detection without operatordependent ultrasound measurements, but further validation against FMD is required.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.256</doi>
          <udk>616.13/14-008.46-073.75:543.42; 577.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>endothelial dysfunction</keyword>
            <keyword>spectrophotometry</keyword>
            <keyword>non-invasive diagnostics</keyword>
            <keyword>reactive hyperemia</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.56/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>284-288</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Astafiev</surname>
              <initials>Artyom</initials>
              <email>astafiev.artyom@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Shakhov</surname>
              <initials>Aleksander</initials>
              <email>physics2007@yandex.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Syrchina </surname>
              <initials>Maria </initials>
              <email>wrongclue@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Nadtochenko</surname>
              <initials>Victor</initials>
              <email>nadtochenko@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Fluorescent micropatterning of an albumin film with high intensity femtosecond laser pulses</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this study, we performed laser ablation of the solid albumin film, using nearinfrared high intensity femtosecond laser pulses. As a result, microstructures with multicolor and excitation-dependent visible fluorescence were produced. We studied fluorescence characteristics of laser-processed protein and characterized its chemical modifications.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.257</doi>
          <udk>544.536</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>proteins</keyword>
            <keyword>femtosecond laser pulses</keyword>
            <keyword>fluorescence</keyword>
            <keyword>fluorescence patterning</keyword>
            <keyword>laser microstructuring</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.57/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>289-295</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Shavshin </surname>
              <initials>Artyom </initials>
              <email>shavshin2107@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Dmitriev </surname>
              <initials>Roman </initials>
              <email>Rusher.official@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Davydov</surname>
              <initials>Vadim</initials>
              <email>davydov_vadim66@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Boldarev</surname>
              <initials>Dmitriy</initials>
              <email>boldarev2001@inbox.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Klimenko </surname>
              <initials>Daria </initials>
              <email>dasha.klimenko.01@inbox.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0009-0004-8401-0181</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Popov </surname>
              <initials>Alexander </initials>
              <email>alexander_popov_work@mail.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Valov</surname>
              <initials>Anton </initials>
              <email>tony.valov2015@yandex.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Development of a method for increasing the stability of a group frequency standard</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents a method for increasing the stability of group frequency standards, the effectiveness of which has been confirmed in the course of mathematical modeling of transient processes in a system consisting of two rubidium and two cesium atomic clocks, upgraded with an automatic gain control (AGC) system. The dynamics of mutual influence between individual frequency standards are described using a system of stochastic differential equations based on Langevin equations. Numerical simulations demonstrate that properly selected AGC parameters and coupling coefficients significantly reduce group signal dispersion and ensure high system stability. The results show a 30–40% improvement in frequency stability compared to conventional single-standard configurations, making this approach particularly valuable for satellite navigation systems and telecommunication networks.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.258</doi>
          <udk>53.06</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>atomic frequency standard</keyword>
            <keyword>group frequency standard</keyword>
            <keyword>automatic gain control</keyword>
            <keyword>Langevin equations</keyword>
            <keyword>stochastic differential equations</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.58/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>296-300</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-4635-0044</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Morozov</surname>
              <initials>Mikhail</initials>
              <email>mikhail.yu.morozov@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-0724-6391</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Mashinsky </surname>
              <initials>Konstantin </initials>
              <email>konstantin-m92@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0003-1303-6443</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Popov</surname>
              <initials>Vyacheslav</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Terahertz lasing in open plane-parallel metal-dielectric resonator with graphene</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Terahertz amplification and lasing regimes in open plane-parallel metal-dielectric resonator with population inverted (active) graphene are studied theoretically. Terahertz lasing arises at the Fabry–Perot resonance in the open-side metal-dielectric substrate of graphene in the vicinity of the reststrahlen band edge of GaAs superstrate due to photon-phonon interaction in GaAs.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.259</doi>
          <udk>621.373.826</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>terahertz</keyword>
            <keyword>lasing</keyword>
            <keyword>graphene</keyword>
            <keyword>inversion</keyword>
            <keyword>Fabry–Perot resonance</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.59/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>301-304</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Prikhodko </surname>
              <initials>Anatoliy </initials>
              <email>anatprikh1995@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Lvov </surname>
              <initials>Andrey </initials>
              <email>andrei.lvov1707@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Shurakov</surname>
              <initials>Alexander</initials>
              <email>alexander@rplab.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0003-3976-297X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Koucheryavy</surname>
              <initials>Yevgeni </initials>
              <email>ykoucheryavy@hse.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Subterahertz 2 Gbit/s wireless channel with frequency-driven beam steering</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, we report on a subterahertz wireless channel with frequency-driven beam steering in reflected light as a blockage mitigation tool, which is in demand by the next-generation wireless networks with user mobility support. Blockage-preventing switching between user devices via frequency-selective reflecting surface is demonstrated for 2 Gbit/s indoor channel with carrier frequencies in the spectral band 134-158 GHz.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.260</doi>
          <udk>621.396.42</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>6G</keyword>
            <keyword>wireless channel</keyword>
            <keyword>subterahertz</keyword>
            <keyword>indoor</keyword>
            <keyword>intelligent reflecting surface</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.60/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>305-309</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0005-6258-9353</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Rozhkova</surname>
              <initials>Polina</initials>
              <email>pv_rozhkova2@student.mpgu.edu</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Belikov</surname>
              <initials>Ivan</initials>
              <email>ibelikov@hse.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Prikhodko </surname>
              <initials>Anatoliy </initials>
              <email>anatprikh1995@yandex.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Shurakov</surname>
              <initials>Alexander</initials>
              <email>alexander@rplab.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Spectral and technological studies of polyurethane films for flexible sub-THz antennas</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Efficient antenna solutions are demanded by variety of applications nowadays. As a part of subterahertz (sub-THz) electronics, they are of use in modern wireless modules and systems, providing opportunities for an ultra-high speed data transfer, remote sensing, energy harvesting, etc. The appearance of robust flexible antennas and metasurfaces can substantially widen the scope of potential application of sub-THz wireless technologies, bringing them to practical use cases. This study focuses on the properties of polyurethane and hydrogel polyurethane films in the context of their spectral characteristics and technological robustness. The thicknesses of the films are 0.18±0.01 mm and 0.15±0.01 mm. Calibrated quartz handlewafers are used to mount them into the optical path of the employed sub-THz reflectometer. At 130–160 GHz, we measure complex permittivities of 2.95 (1 + 0.01i) and 3.15 (1 + 0.01i), making both films well-suited for designs of planar antennas on quartz. Hydrogel polyurethane film, however, does not demonstrate selectivity to acetone-assisted lithographic processes, leaving polyurethane film as the only candidate for cleanroom fabrication.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.261</doi>
          <udk>621.396.67</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>subterahertz</keyword>
            <keyword>reflection spectrum</keyword>
            <keyword>dielectric film</keyword>
            <keyword>polyurethane</keyword>
            <keyword>hydrogel polyurethane</keyword>
            <keyword>complex permittivity</keyword>
            <keyword>flexible antenna</keyword>
            <keyword>cleanroom fabrication</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.61/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>310-314</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0009-6785-4389</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Ershova </surname>
              <initials>Margarita </initials>
              <email>mi_ershova@student.mpgu.edu</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Lvov </surname>
              <initials>Andrey </initials>
              <email>andrei.lvov1707@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0007-0224-717X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Sherstov</surname>
              <initials>Vladimir</initials>
              <email>vasherstov@edu.hse.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Prikhodko </surname>
              <initials>Anatoliy </initials>
              <email>anatprikh1995@yandex.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Shurakov</surname>
              <initials>Alexander</initials>
              <email>alexander@rplab.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">A comparative study of near-field blockages in 14 GHz and 140 GHz indoor wireless channels</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Further increase in the volume and speed of data transfer requires the use of the subterahertz frequency range as the next stage in the evolution of wireless communication systems. Problems emerge due to large propagation losses of subterahertz signals in the atmosphere and a drop in the output power and sensitivity of subterahertz transceivers. This leads to the necessity of highly directional communication channels. Such channels will rely on the use of antenna arrays in both the base station and the user equipment. Given the inherent limitation to relatively small coverage areas, the deployment of subterahertz systems in indoor environments will emerge as a key aspect of their practical implementation. It is expected that line-of-sight channel blockages by users in crowded premises will significantly affect the communication stability. Signal scattering effects are to be different from those observed at microwaves. Moreover, near-field wireless operation becomes possible and probable. In this paper, we perform a comparative study of near-field blockages in 14 GHz and 140 GHz indoor wireless channels. Different trajectories of the blocking user are studied. A diffraction model describing dynamics of the blockage process is parameterized. The results obtained allow one to enhance the existing cluster models of subterahertz channels and to determine the available time budget for communication systems with real-time blockage avoidance.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.262</doi>
          <udk>537.86</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>subterahertz</keyword>
            <keyword>6G network</keyword>
            <keyword>indoor deployment</keyword>
            <keyword>channel blockage</keyword>
            <keyword>near-field diffraction</keyword>
            <keyword>signal time series</keyword>
            <keyword>signal loss</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.62/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>315-318</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Lvov </surname>
              <initials>Andrey </initials>
              <email>andrei.lvov1707@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Shurakov</surname>
              <initials>Alexander</initials>
              <email>alexander@rplab.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Low-loss reflective X-band phase shifter with wide phase control range</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Nowadays, one of the important tasks driven by the actual society needs is the development of effective technical solutions in the field of reflective surfaces and antenna arrays for modern microwave wireless networks. They are necessary to enhance network coverage and communication stability on the way of the operating frequency increase. Their use is beneficial in highly directive wide-band radio channels vulnerable to blockage and micromobility effects. In this work, we propose a low-loss reflective X-band phase shifter with wide phase control range which can be effectively used as a part of field-programmable reflectarray for radio signal routing. Our study focuses on the influence of the errors in geometrical parameters arising during the fabrication process on the radiophysical properties of the phase shifter based on a log-periodic antenna integrated with diode. For such a design, we demonstrate geometry-defined reflection losses of less than 1 dB, and the corresponding phase control range approaching 330° with a tolerable absolute geometry deviation of up to 90 μm.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.183.263</doi>
          <udk>621.396.42</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>microwave devices</keyword>
            <keyword>reflective antenna</keyword>
            <keyword>reflection coefficient</keyword>
            <keyword>varactor diode</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.83.63/</furl>
          <file/>
        </files>
      </article>
    </articles>
  </issue>
</journal>
